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THS4500CDGN Datasheet(PDF) 2 Page - Texas Instruments

Part # THS4500CDGN
Description  WIDEBAND, LOW-DISTORTION, FULLY DIFFERENTIAL AMPLIFIERS
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Manufacturer  TI1 [Texas Instruments]
Direct Link  http://www.ti.com
Logo TI1 - Texas Instruments

THS4500CDGN Datasheet(HTML) 2 Page - Texas Instruments

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THS4500
THS4501
SLOS350F
– APRIL 2002 – REVISED OCTOBER 2011
www.ti.com
This integrated circuit can be damaged by ESD. Texas Instruments recommends that all integrated circuits be handled with
appropriate precautions. Failure to observe proper handling and installation procedures can cause damage.
ESD damage can range from subtle performance degradation to complete device failure. Precision integrated circuits may be more
susceptible to damage because very small parametric changes could cause the device not to meet its published specifications.
ABSOLUTE MAXIMUM RATINGS
(1)
Over operating free-air temperature range, unless otherwise noted.
UNIT
Supply voltage, VS
16.5 V
Input voltage, VI
±VS
Output current, IO
(2)
150 mA
Differential input voltage, VID
4 V
Continuous power dissipation
See Dissipation Rating Table
Maximum junction temperature, TJ
(3)
+150
°C
Maximum junction temperature, continuous operation, long-term reliability, TJ
+125
°C
C suffix
0
°C to +70°C
Operating free-air temperature range, TA
(4)
I suffix
–40°C to +85°C
Storage temperature range, Tstg
–65°C to +150°C
Lead temperature 1,6 mm (1/16 inch) from case for 10 seconds
+300
°C
HBM
4000 V
ESD rating:
CDM
1000 V
MM
100 V
(1)
Stresses above these ratings may cause permanent damage. Exposure to absolute maximum conditions for extended periods may
degrade device reliability. These are stress ratings only, and functional operation of the device at these or any other conditions beyond
those specified is not implied.
(2)
The THS4500/1 may incorporate a PowerPAD on the underside of the chip. This acts as a heat sink and must be connected to a
thermally dissipative plane for proper power dissipation. Failure to do so may result in exceeding the maximum junction temperature
which could permanently damage the device. See TI technical briefs SLMA002 and SLMA004 for more information about utilizing the
PowerPAD thermally-enhanced package.
(3)
The absolute maximum temperature under any condition is limited by the constraints of the silicon process.
(4)
The maximum junction temperature for continuous operation is limited by package constraints. Operation above this temperature may
result in reduced reliability and/or lifetime of the device.
DISSIPATION RATINGS TABLE
POWER RATING(2)
θJC
θJA
(1)
PACKAGE
(
°C/W)
(
°C/W)
TA ≤ +25°C
TA = +85°C
D (8-pin)
38.3
97.5
1.02 W
410 mW
DGN (8-pin)
4.7
58.4
1.71 W
685 mW
DGK (8-pin)
54.2
260
385 mW
154 mW
(1)
This data was taken using the JEDEC standard High-K test PCB.
(2)
Power rating is determined with a junction temperature of +125
°C. This is the point where distortion starts to substantially increase.
Thermal management of the final PCB should strive to keep the junction temperature at or below +125
°C for best performance and
long-term reliability.
RECOMMENDED OPERATING CONDITIONS
MIN
NOM
MAX
UNIT
Dual supply
±5
±7.5
Supply voltage
V
Single supply
4.5
5
15
C suffix
0
+70
Operating free- air temperature, TA
°C
I suffix
–40
+85
2
Submit Documentation Feedback
Copyright
© 2002–2011, Texas Instruments Incorporated
Product Folder Link(s): THS4500 THS4501


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