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ALD1103PB Datasheet(PDF) 2 Page - Advanced Linear Devices |
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ALD1103PB Datasheet(HTML) 2 Page - Advanced Linear Devices |
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2 / 6 page  ALD1103 Advanced Linear Devices 2 ABSOLUTE MAXIMUM RATINGS Drain-source voltage, VDS 13.2V Gate-source voltage, VGS 13.2V Power dissipation 500 mW Operating temperature range PB, SB package 0 °C to +70°C DB package -55 °C to +125°C Storage temperature range -65 °C to +150°C Lead temperature, 10 seconds +260 °C Gate Threshold VT 0.4 0.7 1.0 V IDS = 10µA VGS = VDS -0.4 -0.7 -1.2 V IDS = -10µA VGS = VDS Voltage Offset Voltage VOS 10 mV IDS = 100µA VGS = VDS 10 mV IDS = -100µA VGS = VDS VGS1 - VGS2 Gate Threshold Temperature TCVT -1.2 mV/ °C -1.3 mV/ °C Drift On Drain IDS (ON) 25 40 mA VGS = VDS = 5V -8 -16 mA VGS = VDS = -5V Current Trans-. Gfs 5 10 mmho VDS = 5V IDS= 10mA 2 4 mmho VDS = -5V IDS= -10mA conductance Mismatch ∆Gfs 0.5 % 0.5 % Output GOS 200 µmho VDS = 5V IDS = 10mA 500 µmho VDS = -5V IDS = -10mA Conductance Drain Source RDS(ON) 50 75 Ω VDS = 0.1V VGS = 5V 180 270 Ω VDS = -0.1V VGS = -5V ON Resistance Drain Source ON Resistance ∆RDS(ON) 0.5 % VDS = 0.1V VGS = 5V 0.5 % VDS = -0.1V VGS = -5V Mismatch Drain Source Breakdown BVDSS 12 V IDS = 10µA VGS =0V -12 V IDS = -10µA VGS =0V Voltage Off Drain IDS(OFF) 0.1 4 nA VDS =12V IGS = 0V 0.1 4 nA VDS = -12V VGS = 0V Current 4 µATA = 125°C4 µATA = 125°C Gate Leakage IGSS 150 pA VDS = 0V VGS =12V 1 50 pA VDS = 0V VGS =-12V Current 10 nA TA = 125°C10 nA TA = 125°C Input CISS 610 pF 6 10 pF Capacitance OPERATING ELECTRICAL CHARACTERISTICS TA = 25 °C unless otherwise specified N - Channel Test P - Channel Test Parameter Symbol Min Typ Max Unit Conditions Min Typ Max Unit Conditions |
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