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2SA608S Datasheet(PDF) 1 Page - SHENZHEN YONGERJIA INDUSTRY CO.,LTD |
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2SA608S Datasheet(HTML) 1 Page - SHENZHEN YONGERJIA INDUSTRY CO.,LTD |
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1 / 1 page WEJ ELECTRONIC CO.,LTD 2SA608S TRANSISTOR (PNP) FEATURES Power dissipation PCM : 300 mW (Tamb=25 ℃) Collector current ICM : -100 mA Collector-base voltage V(BR)CBO : -40 V Operating and storage junction temperature range TJ, Tstg: -55 ℃ to +150℃ ELECTRICAL CHARACTERISTICS (Tamb=25 ℃ unless otherwise specified) Parameter Symbol Test conditions MIN TYP MAX UNIT Collector-base breakdown voltage V(BR)CBO Ic=-100 µA, I E=0 -40 V Collector-emitter breakdown voltage V(BR)CEO Ic=-1mA, IB=0 -30 V Emitter-Base breakdown voltage V(BR)EBO IE=-100µA, IC=0 -5 V Collector cut-off current ICBO VCB=-25V, IE=0 -1 µA Emitter cut-off current IEBO VEB=-4V, IC=0 -1 µA DC current gain hFE VCE=-6V, IC=-1mA 60 560 Collector-emitter saturation voltage VCE(sat) IC=-50mA, IB=-5mA -0.5 V Transition frequency fT VCE=-6V, IC=-10mA 180 MHz Collector output capacitance Cob VCB=-6V, f=1MHz 7 pF CLASSIFICATION OF hFE Rank D E F G Range 60-120 100-200 160-320 280-560 TO-92S 1. EMITTER 2. COLLECTOR 3. BASE 123 2SA608S Http:// www.wej.cn E-mail:wej@yongerjia.com WEJ ELECTRONIC CO. RoHS |
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