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NTD2955G Datasheet(PDF) 1 Page - ON Semiconductor

Part # NTD2955G
Description  Power MOSFET
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Manufacturer  ONSEMI [ON Semiconductor]
Direct Link  http://www.onsemi.com
Logo ONSEMI - ON Semiconductor

NTD2955G Datasheet(HTML) 1 Page - ON Semiconductor

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© Semiconductor Components Industries, LLC, 2013
August, 2013 − Rev. 13
1
Publication Order Number:
NTD2955/D
NTD2955, NVD2955
Power MOSFET
−60 V, −12 A, P−Channel DPAK
This Power MOSFET is designed to withstand high energy in the
avalanche and commutation modes. Designed for low−voltage, high−
speed switching applications in power supplies, converters, and power
motor controls. These devices are particularly well suited for bridge
circuits where diode speed and commutating safe operating areas are
critical and offer an additional safety margin against unexpected
voltage transients.
Features
Avalanche Energy Specified
IDSS and VDS(on) Specified at Elevated Temperature
Designed for Low−Voltage, High−Speed Switching Applications and
to Withstand High Energy in the Avalanche and Commutation Modes
NVD Prefix for Automotive and Other Applications Requiring
Unique Site and Control Change Requirements; AEC−Q101
Qualified and PPAP Capable
These Devices are Pb−Free and are RoHS Compliant
MAXIMUM RATINGS (TJ = 25°C unless otherwise noted)
Rating
Symbol
Value
Unit
Drain−to−Source Voltage
VDSS
−60
Vdc
Gate−to−Source Voltage
− Continuous
− Non−repetitive (tp ≤ 10 ms)
VGS
VGSM
± 20
± 25
Vdc
Vpk
Drain Current
Drain Current − Continuous @ Ta = 25°C
Drain Current − Single Pulse (tp ≤ 10 ms)
ID
IDM
−12
−18
Adc
Apk
Total Power Dissipation @ Ta = 25°C
PD
55
W
Operating and Storage Temperature
Range
TJ, Tstg
−55 to
175
°C
Single Pulse Drain−to−Source Avalanche
Energy − Starting TJ = 25°C
(VDD = 25 Vdc, VGS = 10 Vdc, Peak
IL = 12 Apk, L = 3.0 mH, RG = 25 W)
EAS
216
mJ
Thermal Resistance
− Junction−to−Case
− Junction−to−Ambient (Note 1)
− Junction−to−Ambient (Note 2)
RqJC
RqJA
RqJA
2.73
71.4
100
°C/W
Maximum Lead Temperature for Soldering
Purposes, 1/8 in. from case for
10 seconds
TL
260
°C
Stresses exceeding Maximum Ratings may damage the device. Maximum
Ratings are stress ratings only. Functional operation above the Recommended
Operating Conditions is not implied. Extended exposure to stresses above the
Recommended Operating Conditions may affect device reliability.
1. When surface mounted to an FR4 board using 1 in pad size
(Cu area = 1.127 in2).
2. When surface mounted to an FR4 board using the minimum recommended
pad size (Cu area = 0.412 in2).
D
S
G
P−Channel
http://onsemi.com
−60 V
155 mW @ −10 V, 6 A
RDS(on) TYP
−12 A
ID MAX
V(BR)DSS
Y
= Year
WW = Work Week
G
= Pb−Free Package
1
Gate
3
Source
2
Drain
4
Drain
DPAK
CASE 369C
STYLE 2
MARKING DIAGRAMS
1 2
3
4
DPAK−3
CASE 369D
STYLE 2
1
2
3
4
See detailed ordering and shipping information in the package
dimensions section on page 6 of this data sheet.
ORDERING INFORMATION
1
Gate
3
Source
2
Drain
4
Drain
1
Gate
3
Source
2
Drain
4
Drain


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