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NTD2955G Datasheet(PDF) 1 Page - ON Semiconductor |
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NTD2955G Datasheet(HTML) 1 Page - ON Semiconductor |
1 / 8 page © Semiconductor Components Industries, LLC, 2013 August, 2013 − Rev. 13 1 Publication Order Number: NTD2955/D NTD2955, NVD2955 Power MOSFET −60 V, −12 A, P−Channel DPAK This Power MOSFET is designed to withstand high energy in the avalanche and commutation modes. Designed for low−voltage, high− speed switching applications in power supplies, converters, and power motor controls. These devices are particularly well suited for bridge circuits where diode speed and commutating safe operating areas are critical and offer an additional safety margin against unexpected voltage transients. Features • Avalanche Energy Specified • IDSS and VDS(on) Specified at Elevated Temperature • Designed for Low−Voltage, High−Speed Switching Applications and to Withstand High Energy in the Avalanche and Commutation Modes • NVD Prefix for Automotive and Other Applications Requiring Unique Site and Control Change Requirements; AEC−Q101 Qualified and PPAP Capable • These Devices are Pb−Free and are RoHS Compliant MAXIMUM RATINGS (TJ = 25°C unless otherwise noted) Rating Symbol Value Unit Drain−to−Source Voltage VDSS −60 Vdc Gate−to−Source Voltage − Continuous − Non−repetitive (tp ≤ 10 ms) VGS VGSM ± 20 ± 25 Vdc Vpk Drain Current Drain Current − Continuous @ Ta = 25°C Drain Current − Single Pulse (tp ≤ 10 ms) ID IDM −12 −18 Adc Apk Total Power Dissipation @ Ta = 25°C PD 55 W Operating and Storage Temperature Range TJ, Tstg −55 to 175 °C Single Pulse Drain−to−Source Avalanche Energy − Starting TJ = 25°C (VDD = 25 Vdc, VGS = 10 Vdc, Peak IL = 12 Apk, L = 3.0 mH, RG = 25 W) EAS 216 mJ Thermal Resistance − Junction−to−Case − Junction−to−Ambient (Note 1) − Junction−to−Ambient (Note 2) RqJC RqJA RqJA 2.73 71.4 100 °C/W Maximum Lead Temperature for Soldering Purposes, 1/8 in. from case for 10 seconds TL 260 °C Stresses exceeding Maximum Ratings may damage the device. Maximum Ratings are stress ratings only. Functional operation above the Recommended Operating Conditions is not implied. Extended exposure to stresses above the Recommended Operating Conditions may affect device reliability. 1. When surface mounted to an FR4 board using 1 in pad size (Cu area = 1.127 in2). 2. When surface mounted to an FR4 board using the minimum recommended pad size (Cu area = 0.412 in2). D S G P−Channel http://onsemi.com −60 V 155 mW @ −10 V, 6 A RDS(on) TYP −12 A ID MAX V(BR)DSS Y = Year WW = Work Week G = Pb−Free Package 1 Gate 3 Source 2 Drain 4 Drain DPAK CASE 369C STYLE 2 MARKING DIAGRAMS 1 2 3 4 DPAK−3 CASE 369D STYLE 2 1 2 3 4 See detailed ordering and shipping information in the package dimensions section on page 6 of this data sheet. ORDERING INFORMATION 1 Gate 3 Source 2 Drain 4 Drain 1 Gate 3 Source 2 Drain 4 Drain |
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