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MC3479FN Datasheet(PDF) 7 Page - ON Semiconductor |
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MC3479FN Datasheet(HTML) 7 Page - ON Semiconductor |
7 / 10 page MC3479 http://onsemi.com 7 Figure 7. Output Sequence Phase A Output (a) Full Step Mode A CW/CCW A A A A Bias/Set Clk Phase A Output Phase A A (c) Half Step Mode CD L3 L4 F L1 E C L1 L2 L2 L3 L4 BD L1 CD B H G D BC E F (b) Half Step Mode L2 L3 L4 GH B B C D B C B = Logic 0" = Logic 1" = Logic 1" = High Impedance CW/CCW = Logic 0" F/HS = Logic 1", OIC = Logic 0" D BC = High Impedance = Logic 0" = Don ′t Care F/HS OIC CW/CCW F/HS OIC The value of RB (between this pin and ground) is then determined by: R B + V M * 0.7 V I BS b) When this pin is opened (raised to VM) such that IBS is < 5.0 mA, the internal logic is set to the Phase A condition, and the four driver outputs are put into a high impedance state. The Phase A output (Pin 11) goes active (low), and input signals at the controls are ignored during this time. Upon re−establishing IBS, the driver outputs become active, and will be in the Phase A position (L1 = L3 = VOHD, L2 = L4 = VOLD). The circuit will then respond to the inputs at the controls. The Set function (opening this pin) can be used as a powerup reset while supply voltages are settling. A CMOS logic gate (powered by VM) can be used to control this pin as shown in Figure 12. c) Whenever the motor is not being stepped, power dissipation in the IC and in the motor may be lowered by reducing IBS, so as to reduce the output (motor) current. Setting IBS to 75 mA will reduce the motor current, but will not reset the internal logic as described above. See Figure 13 for a suggested circuit. Power Dissipation The power dissipated by the MC3479 must be such that the junction temperature (TJ) does not exceed 150°C. The power dissipated can be expressed as: P = (VM IM) + (2 IOD) [(VM − VOHD) + VOLD] where VM = Supply voltage; IM = Supply current other than IOD; IOD = Output current to each motor coil; VOHD = Driver output high voltage; VOLD = Driver output low voltage. The power supply current (IM) is obtained from Figure 8. After the power dissipation is calculated, the junction temperature can be calculated using: TJ = (P RqJA) + TA where RqJA = Junction−to−ambient thermal resistance (52 °C/W for the DIP, 72°C/W for the FN Package); TA = Ambient Temperature. |
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