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PSMN1R6-30BL Datasheet(PDF) 10 Page - NXP Semiconductors |
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PSMN1R6-30BL Datasheet(HTML) 10 Page - NXP Semiconductors |
10 / 15 page PSMN1R6-30BL All information provided in this document is subject to legal disclaimers. © NXP B.V. 2012. All rights reserved. Product data sheet Rev. 1 — 22 March 2012 10 of 15 NXP Semiconductors PSMN1R6-30BL N-channel 30 V 1.9 m Ω logic level MOSFET in D2PAK Fig 15. Gate-source voltage as a function of gate charge; typical values Fig 16. Input, output and reverse transfer capacitances as a function of drain-source voltage; typical values Fig 17. Source current as a function of source-drain voltage; typical values 003aad015 0 2 4 6 8 10 0 40 80 120 160 200 240 QG (nC) VGS (V) VDS = 15 V 003aad016 10 2 10 3 10 4 10 5 10 -1 1 10 10 2 VDS (V) C (pF) Ciss Crss Coss 003aad014 0 20 40 60 80 100 0 0.2 0.4 0.6 0.8 1 VSD (V) IS (A) Tj = 25 °C 175 °C |
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