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PSMN011-30YLC Datasheet(PDF) 10 Page - NXP Semiconductors |
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PSMN011-30YLC Datasheet(HTML) 10 Page - NXP Semiconductors |
10 / 15 page PSMN011-30YLC All information provided in this document is subject to legal disclaimers. © NXP B.V. 2011. All rights reserved. Product data sheet Rev. 3 — 24 October 2011 10 of 15 NXP Semiconductors PSMN011-30YLC N-channel 30 V 11.6 m Ω logic level MOSFET in LFPAK using NextPower technology Fig 16. Input, output and reverse transfer capacitances as a function of drain-source voltage; typical values Fig 17. Source current as a function of source-drain voltage; typical values Fig 18. Reverse recovery timing definition 003aag228 10 10 2 10 3 10 -1 1 10 10 2 V DS(V) C (pF) C iss C rss C oss 003aag229 0 10 20 30 40 50 0 0.3 0.6 0.9 1.2 V SD(V) I S (A) T j = 25 °C T j = 150 °C 003a a f 444 0 t (s ) ID (A) IRM 0.25 IRM trr ta tb |
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