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NTD5802N Datasheet(PDF) 2 Page - ON Semiconductor |
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NTD5802N Datasheet(HTML) 2 Page - ON Semiconductor |
2 / 7 page NTD5802N, NVD5802N http://onsemi.com 2 THERMAL RESISTANCE MAXIMUM RATINGS Parameter Symbol Value Unit Junction−to−Case (Drain) RqJC 1.6 °C/W Junction−to−Ambient − Steady State (Note 1) RqJA 60 Junction−to−Ambient − Steady State (Note 2) RqJA 105 1. Surface−mounted on FR4 board using 1 in sq pad size, 1 oz Cu. 2. Surface−mounted on FR4 board using the minimum recommended pad size. ELECTRICAL CHARACTERISTICS (TJ = 25°C unless otherwise noted) Parameter Symbol Test Condition Min Typ Max Unit OFF CHARACTERISTICS Drain−to−Source Breakdown Voltage V(BR)DSS VGS = 0 V, ID = 10 mA 40 V Drain−to−Source Breakdown Voltage Temperature Coefficient V(BR)DSS/TJ 40 mV/°C Zero Gate Voltage Drain Current IDSS VGS = 0 V, VDS = 40 V TJ = 25°C 1.0 mA TJ = 150°C 50 Gate−to−Source Leakage Current IGSS VDS = 0 V, VGS = "20 V "100 nA ON CHARACTERISTICS (Note 3) Gate Threshold Voltage VGS(TH) VGS = VDS, ID = 250 mA 1.5 3.5 V Negative Threshold Temperature Coefficient VGS(TH)/TJ −7.4 mV/°C Drain−to−Source On Resistance RDS(on) VGS = 10 V, ID = 50 A 3.6 4.4 mW VGS = 5.0 V, ID = 50 A 6.5 7.8 Forward Transconductance gFS VDS = 15 V, ID = 15 A 16.8 S CHARGES AND CAPACITANCES Input Capacitance Ciss VGS = 0 V, f = 1.0 MHz, VDS = 12 V 5300 pF Output Capacitance Coss 850 Reverse Transfer Capacitance Crss 550 Input Capacitance Ciss VGS = 0 V, f = 1.0 MHz, VDS = 25 V 5025 pF Output Capacitance Coss 580 Reverse Transfer Capacitance Crss 400 Total Gate Charge QG(TOT) VGS = 10 V, VDS = 15 V, ID = 50 A 75 100 nC Threshold Gate Charge QG(TH) 6.0 Gate−to−Source Charge QGS 18 Gate−to−Drain Charge QGD 15 SWITCHING CHARACTERISTICS (Note 4) Turn−On Delay Time td(on) VGS = 10 V, VDS = 20 V, ID = 50 A, RG = 2.0 W 14 ns Rise Time tr 52 Turn−Off Delay Time td(off) 39 Fall Time tf 8.5 3. Pulse Test: Pulse Width ≤ 300 ms, Duty Cycle ≤ 2%. 4. Switching characteristics are independent of operating junction temperatures. |
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