NTD5802N datasheet(2/7 Pages) ONSEMI

Part #	NTD5802N

Description	Power MOSFET 40 V, Single N?묬hannel, 101 A DPAK

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Manufacturer	ONSEMI [ON Semiconductor]

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NTD5802N, NVD5802N

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THERMAL RESISTANCE MAXIMUM RATINGS

Parameter

Symbol

Value

Unit

Junction−to−Case (Drain)

RqJC

1.6

°C/W

Junction−to−Ambient − Steady State (Note 1)

RqJA

60

Junction−to−Ambient − Steady State (Note 2)

RqJA

105

1. Surface−mounted on FR4 board using 1 in sq pad size, 1 oz Cu.

2. Surface−mounted on FR4 board using the minimum recommended pad size.

ELECTRICAL CHARACTERISTICS (TJ = 25°C unless otherwise noted)

Parameter

Symbol

Test Condition

Min

Typ

Max

Unit

OFF CHARACTERISTICS

Drain−to−Source Breakdown Voltage

V(BR)DSS

VGS = 0 V, ID = 10 mA

40

V

Drain−to−Source Breakdown Voltage

Temperature Coefficient

V(BR)DSS/TJ

40

mV/°C

Zero Gate Voltage Drain Current

IDSS

VGS = 0 V,

VDS = 40 V

TJ = 25°C

1.0

mA

TJ = 150°C

50

Gate−to−Source Leakage Current

IGSS

VDS = 0 V, VGS = "20 V

"100

nA

ON CHARACTERISTICS (Note 3)

Gate Threshold Voltage

VGS(TH)

VGS = VDS, ID = 250 mA

1.5

3.5

V

Negative Threshold Temperature

Coefficient

VGS(TH)/TJ

−7.4

mV/°C

Drain−to−Source On Resistance

RDS(on)

VGS = 10 V, ID = 50 A

3.6

4.4

mW

VGS = 5.0 V, ID = 50 A

6.5

7.8

Forward Transconductance

gFS

VDS = 15 V, ID = 15 A

16.8

S

CHARGES AND CAPACITANCES

Input Capacitance

Ciss

VGS = 0 V, f = 1.0 MHz,

VDS = 12 V

5300

pF

Output Capacitance

Coss

850

Reverse Transfer Capacitance

Crss

550

Input Capacitance

Ciss

VGS = 0 V, f = 1.0 MHz,

VDS = 25 V

5025

pF

Output Capacitance

Coss

580

Reverse Transfer Capacitance

Crss

400

Total Gate Charge

QG(TOT)

VGS = 10 V, VDS = 15 V,

ID = 50 A

75

100

nC

Threshold Gate Charge

QG(TH)

6.0

Gate−to−Source Charge

QGS

18

Gate−to−Drain Charge

QGD

15

SWITCHING CHARACTERISTICS (Note 4)

Turn−On Delay Time

td(on)

VGS = 10 V, VDS = 20 V,

ID = 50 A, RG = 2.0 W

14

ns

Rise Time

tr

52

Turn−Off Delay Time

td(off)

39

Fall Time

tf

8.5

3. Pulse Test: Pulse Width ≤ 300 ms, Duty Cycle ≤ 2%.

4. Switching characteristics are independent of operating junction temperatures.

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