NTD5802N datasheet(4/7 Pages) ONSEMI

Part #	NTD5802N

Description	Power MOSFET 40 V, Single N?묬hannel, 101 A DPAK

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NTD5802N, NVD5802N

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TYPICAL PERFORMANCE CHARACTERISTICS

7 V

100

1000

10000

100000

2

6

10

14

18

22

26

30

34

38

VGS, GATE−TO−SOURCE VOLTAGE (V)

Figure 1. On−Region Characteristics

Figure 2. Transfer Characteristics

Figure 3. On−Resistance vs. Drain Current

Figure 4. On−Resistance vs. Drain Current and

Gate Voltage

ID, DRAIN CURRENT (A)

Figure 5. On−Resistance Variation with

Temperature

TJ, JUNCTION TEMPERATURE (°C)

Figure 6. Drain−to−Source Leakage Current

vs. Voltage

VDS, DRAIN−TO−SOURCE VOLTAGE (V)

0

50

100

150

200

23

456

VDS ≥ 10 V

TJ = 25°C

TJ = −55°C

TJ = 100°C

0.002

0.003

0.004

0.005

0.006

0.007

0.008

0.009

0.010

0.011

0.012

0.013

0.014

0.015

30

50

70

90

110

130

150

170

190

VGS = 5 V

TJ = 25°C

VGS = 10 V

0.7

0.8

0.9

1

1.1

1.2

1.3

1.4

1.5

1.6

1.7

−50 −25

0

25

50

75

100 125 150 175

ID = 50 A

VGS = 10 V

VGS = 0 V

TJ = 150°C

TJ = 100°C

0

20

100

140

200

01

2

5

6

VDS, DRAIN−TO−SOURCE VOLTAGE (V)

34

40

60

80

120

160

180

TJ = 25°C

VGS = 5 V

10 V

6 V

4 V

4.5 V

4.2 V

3.8 V

3.6 V

ID, DRAIN CURRENT (A)

TJ = 150°C

TJ = −55°C

VGS = 10 V

0.002

0.006

0.010

10

30

70

150

190

90

130

0.004

0.008

TJ = 25°C

50

110

170

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