NTMD6N03R2 datasheet(1/8 Pages) ONSEMI

Part #	NTMD6N03R2

Description	Power MOSFET 30 V, 6 A, Dual N--Channel SOIC--8

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Manufacturer	ONSEMI [ON Semiconductor]

Direct Link	http://www.onsemi.com

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 Semiconductor Components Industries, LLC, 2011

October, 2011 -- Rev. 3

1

Publication Order Number:

NTMD6N03R2/D

NTMD6N03R2,

NVMD6N03R2

Power MOSFET

30 V, 6A,DualN--ChannelSOIC--8

Features

 Designed for use in low voltage, high speed switching applications

 Ultra Low On--Resistance Provides

Higher Efficiency and Extends Battery Life

-- RDS(on) = 0.024 Ω,VGS = 10 V (Typ)

-- RDS(on) = 0.030 Ω,VGS = 4.5 V (Typ)

 Miniature SOIC--8 Surface Mount Package Saves Board Space

 Diode is Characterized for Use in Bridge Circuits

 Diode Exhibits High Speed, with Soft Recovery

 AEC Q101 Qualified -- NVMD6N03R2

 These Devices are Pb--Free and are RoHS Compliant

Applications

 DC--DC Converters

 Computers

 Printers

 Cellular and Cordless Phones

 Disk Drives and Tape Drives

MAXIMUM RATINGS (TJ =25C unless otherwise noted)

Rating

Symbol

Value

Unit

Drain--to--Source Voltage

VDSS

30

Volts

Gate--to--Source Voltage -- Continuous

VGS

20

Volts

Drain Current

-- Continuous @ TA =25C

-- Single Pulse (tp  10 ms)

ID

IDM

6.0

30

Adc

Apk

Total Power Dissipation

@TA =25C(Note 1)

@TA =25C(Note 2)

PD

2.0

1.29

Watts

Operating and Storage Temperature

Range

TJ,Tstg

--55 to

+150

C

Single Pulse Drain--to--Source Avalanche

Energy -- Starting TJ =25C

(VDD =30 Vdc, VGS =5.0 Vdc,

VDS = 20 Vdc, Peak IL =9.0 Apk,

L= 10 mH,RG =25 Ω)

EAS

325

mJ

Thermal Resistance

-- Junction--to--Ambient (Note 1)

-- Junction--to--Ambient (Note 2)

RθJA

62.5

97

C/W

Maximum Lead Temperature for Soldering

Purposes for 10 seconds

TL

260

C

Stresses exceeding Maximum Ratings may damage the device. Maximum

Ratings are stress ratings only. Functional operation above the Recommended

Operating Conditions is not implied. Extended exposure to stresses above the

Recommended Operating Conditions may affect device reliability.

1. When surface mounted to an FR4 board using 1 pad size, t  10 s

2. When surface mounted to an FR4 board using 1 pad size, t = steady state

Device

Package

Shipping†

ORDERING INFORMATION

http://onsemi.com

D

S

G

N--Channel

D

S

G

VDSS

RDS(ON) Typ

ID Max

30 V

24 mΩ @VGS =10 V

6.0 A

†For information on tape and reel specifications,

including part orientation and tape sizes, please

refer to our Tape and Reel Packaging Specification

Brochure, BRD8011/D.

SOIC--8

CASE 751

STYLE 11

MARKING DIAGRAM &

PIN ASSIGNMENT

E6N03 = Specific Device Code

A

= Assembly Location

Y

= Year

WW

= Work Week

G

= Pb--Free Package

E6N03

AYWW G

G

1

8

1

8

S1 G1 S2 G2

D1 D1 D2 D2

(Note: Microdot may be in either location)

NTMD6N03R2G

SOIC--8

(Pb--Free)

2500 / Tape &

Reel

NVMD6N03R2G

SOIC--8

(Pb--Free)

2500 / Tape &

Reel

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