NTMD6P02R2G datasheet(1/6 Pages) ONSEMI

Part #	NTMD6P02R2G

Description	Power MOSFET 6 A, 20 V, P?묬hannel SOIC??, Dual

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Manufacturer	ONSEMI [ON Semiconductor]

Direct Link	http://www.onsemi.com

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December, 2012 − Rev. 4

1

Publication Order Number:

NTMD6P02R2/D

NTMD6P02, NVMD6P02

Power MOSFET

6 A, 20 V, P−Channel SOIC−8, Dual

Features

• Ultra Low RDS(on)

• Higher Efficiency Extending Battery Life

• Logic Level Gate Drive

• Miniature Dual SOIC−8 Surface Mount Package

• Diode Exhibits High Speed, Soft Recovery

• Avalanche Energy Specified

• These Devices are Pb−Free and are RoHS Compliant

• NVMD Prefix for Automotive and Other Applications Requiring

Unique Site and Control Change Requirements; AEC−Q101

Qualified and PPAP Capable

Applications

• Power Management in Portable and Battery−Powered Products,

i.e.: Cellular and Cordless Telephones, and PCMCIA Cards

MAXIMUM RATINGS

Rating

Symbol

Value

Unit

Drain−to−Source Voltage

VDSS

−20

V

Gate−to−Source Voltage − Continuous

VGS

"12

V

Thermal Resistance −

Junction−to−Ambient (Note 1)

Total Power Dissipation @ TA = 25°C

Continuous Drain Current @ TA = 25°C

Continuous Drain Current @ TA = 70°C

Maximum Operating Power Dissipation

Maximum Operating Drain Current

Pulsed Drain Current (Note 4)

RqJA

PD

ID

PD

ID

IDM

62.5

2.0

−7.8

−5.7

0.5

−3.89

−40

°C/W

W

A

W

A

Thermal Resistance −

Junction−to−Ambient (Note 2)

Total Power Dissipation @ TA = 25°C

Continuous Drain Current @ TA = 25°C

Continuous Drain Current @ TA = 70°C

Maximum Operating Power Dissipation

Maximum Operating Drain Current

Pulsed Drain Current (Note 4)

RqJA

PD

ID

PD

ID

IDM

98

1.28

−6.2

−4.6

0.3

−3.01

−35

°C/W

W

A

W

A

Thermal Resistance −

Junction−to−Ambient (Note 3)

Total Power Dissipation @ TA = 25°C

Continuous Drain Current @ TA = 25°C

Continuous Drain Current @ TA = 70°C

Maximum Operating Power Dissipation

Maximum Operating Drain Current

Pulsed Drain Current (Note 4)

RqJA

PD

ID

PD

ID

IDM

166

0.75

−4.8

−3.5

0.2

−2.48

−30

°C/W

W

A

W

A

Operating and Storage Temperature Range

TJ, Tstg

−55 to

+150

°C

Single Pulse Drain−to−Source Avalanche

Energy − Starting TJ = 25°C (VDD = −20 Vdc,

VGS = −5.0 Vdc, Peak IL = −5.0 Apk,

L = 40 mH, RG = 25 W)

EAS

500

mJ

Maximum Lead Temperature for Soldering

Purposes for 10 seconds

TL

260

°C

Stresses exceeding Maximum Ratings may damage the device. Maximum

Ratings are stress ratings only. Functional operation above the Recommended

Operating Conditions is not implied. Extended exposure to stresses above the

Recommended Operating Conditions may affect device reliability.

1. Mounted onto a 2″ square FR−4 Board (1 in sq, 2 oz. Cu 0.06″ thick single sided), t = 10 seconds.

2. Mounted onto a 2″ square FR−4 Board (1 in sq, 2 oz. Cu 0.06″ thick single sided), t = steady state.

3. Minimum FR−4 or G−10 PCB, t = steady state.

4. Pulse Test: Pulse Width = 300 ms, Duty Cycle = 2%.

6 AMPERES, 20 VOLTS

Device

Package

Shipping†

ORDERING INFORMATION

NTMD6P02R2G

SOIC−8

(Pb−Free)

2500 / Tape & Reel

D

S

G

P−Channel

SOIC−8

CASE 751

STYLE 11

MARKING DIAGRAM &

PIN ASSIGNMENT

E6P02 = Specific Device Code

x

= Blank or S

A

= Assembly Location

Y

= Year

WW

= Work Week

G

= Pb−Free Package

E6P02x

AYWW G

G

1

8

1

8

S1 G1 S2 G2

D1 D1 D2 D2

NTMD6P02R2SG

SOIC−8

(Pb−Free)

NVMD6P02R2G

SOIC−8

(Pb−Free)

http://onsemi.com

(Note: Microdot may be in either location)

†For information on tape and reel specifications,

including part orientation and tape sizes, please

refer to our Tape and Reel Packaging Specifications

Brochure, BRD8011/D

2500 / Tape & Reel

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