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NTMFS4925NET3G Datasheet(PDF) 1 Page - ON Semiconductor |
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NTMFS4925NET3G Datasheet(HTML) 1 Page - ON Semiconductor |
1 / 7 page © Semiconductor Components Industries, LLC, 2011 September, 2011 − Rev. 0 1 Publication Order Number: NTMFS4925NE/D NTMFS4925NE Power MOSFET 30 V, 48 A, Single N−Channel, SO−8 FL Features • Low RDS(on) to Minimize Conduction Losses • Low Capacitance to Minimize Driver Losses • Optimized Gate Charge to Minimize Switching Losses • Dual Sided Cooling Capability • Optimized for 5 V, 12 V Gate Drives • These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS Compliant Applications • CPU Power Delivery • DC−DC Converters MAXIMUM RATINGS (TJ = 25°C unless otherwise stated) Parameter Symbol Value Unit Drain−to−Source Voltage VDSS 30 V Gate−to−Source Voltage VGS ±20 V Continuous Drain Current RqJA (Note 1) Steady State TA = 25°C ID 16.7 A TA = 100°C 10.5 Power Dissipation RqJA (Note 1) TA = 25°C PD 2.70 W Continuous Drain Current RqJA ≤ 10 s (Note 1) TA = 25°C ID 25.2 A TA = 100°C 15.9 Power Dissipation RqJA ≤ 10 s (Note 1) TA = 25°C PD 6.16 W Continuous Drain Current RqJA (Note 2) TA = 25°C ID 9.7 A TA = 100°C 6.2 Power Dissipation RqJA (Note 2) TA = 25°C PD 0.92 W Continuous Drain Current RqJC (Note 1) TC = 25°C ID 48 A TC =100°C 30 Power Dissipation RqJC (Note 1) TC = 25°C PD 23.2 W Pulsed Drain Current TA = 25°C, tp = 10 ms IDM 195 A Current Limited by Package TA = 25°C IDmax 100 A Operating Junction and Storage Temperature TJ, TSTG −55 to +150 °C Source Current (Body Diode) IS 21 A Drain to Source DV/DT dV/dt 6.0 V/ns Single Pulse Drain−to−Source Avalanche Energy (TJ = 25°C, VDD = 24 V, VGS = 10 V, IL = 26 Apk, L = 0.1 mH, RG = 25 W) EAS 34 mJ Lead Temperature for Soldering Purposes (1/8″ from case for 10 s) TL 260 °C Stresses exceeding Maximum Ratings may damage the device. Maximum Ratings are stress ratings only. Functional operation above the Recommended Operating Conditions is not implied. Extended exposure to stresses above the Recommended Operating Conditions may affect device reliability. 1. Surface−mounted on FR4 board using 1 sq−in pad, 1 oz Cu. 2. Surface−mounted on FR4 board using the minimum recommended pad size. SO−8 FLAT LEAD CASE 488AA STYLE 1 MARKING DIAGRAM http://onsemi.com A = Assembly Location Y = Year WW = Work Week G = Pb−Free Package (Note: Microdot may be in either location) 4925NE AYWWG G 1 V(BR)DSS RDS(ON) MAX ID MAX 30 V 6.0 mW @ 10 V 48 A 10 mW @ 4.5 V N−CHANNEL MOSFET Device Package Shipping† ORDERING INFORMATION NTMFS4925NET1G SO−8 FL (Pb−Free) 1500 / Tape & Reel NTMFS4925NET3G SO−8 FL (Pb−Free) 5000 / Tape & Reel †For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging Specifications Brochure, BRD8011/D. S S S G D D D D G (4) S (1,2,3) D (5,6) |
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