NTTFS5116PLTAG datasheet(2/6 Pages) ONSEMI

Part #	NTTFS5116PLTAG

Description	Power MOSFET 60 V, 20 A, 52m

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Manufacturer	ONSEMI [ON Semiconductor]

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NTTFS5116PL

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ELECTRICAL CHARACTERISTICS (TJ = 25°C unless otherwise specified)

Parameter

Symbol

Test Condition

Min

Typ

Max

Unit

OFF CHARACTERISTICS

Drain−to−Source Breakdown Voltage

V(BR)DSS

VGS = 0 V, ID = −250 mA

−60

V

Drain−to−Source Breakdown Voltage

Temperature Coefficient

V(BR)DSS/TJ

69.7

mV/°C

Zero Gate Voltage Drain Current

IDSS

VGS = 0 V,

VDS = −60 V

TJ = 25°C

−1.0

mA

TJ = 125°C

−100

Gate−to−Source Leakage Current

IGSS

VDS = 0 V, VGS = ±20 V

±100

nA

ON CHARACTERISTICS (Note 2)

Gate Threshold Voltage

VGS(TH)

VGS = VDS, ID = −250 mA

−1

−3

V

Negative Threshold Temperature

Coefficient

VGS(TH)/TJ

−6.2

mV/°C

Drain−to−Source On Resistance

RDS(on)

VGS = −10 V

ID = −6 A

37

52

mW

VGS = −4.5 V

ID = −4.4 A

51

72

Forward Transconductance

gFS

VDS = −15 V, ID = −6 A

11

S

CHARGES, CAPACITANCES AND GATE RESISTANCE

Input Capacitance

Ciss

VGS = 0 V, f = 1.0 MHz, VDS = −30 V

1258

pF

Output Capacitance

Coss

127

Reverse Transfer Capacitance

Crss

84

Total Gate Charge

QG(TOT)

VGS = −10 V, VDS = −48 V, ID = −5 A

25

nC

VGS = −4.5 V, VDS = −48 V, ID = −5 A

14

Threshold Gate Charge

QG(TH)

VGS = −4.5 V, VDS = −48 V, ID = −5 A

1

nC

Gate−to−Source Charge

QGS

4

Gate−to−Drain Charge

QGD

7

Plateau Voltage

VGP

3.1

V

Gate Resistance

RG

5.3

W

SWITCHING CHARACTERISTICS (Note 3)

Turn−On Delay Time

td(on)

VGS = −4.5 V, VDS = −48 V,

ID = −5 A, RG = 6 W

15

ns

Rise Time

tr

58

Turn−Off Delay Time

td(off)

30

Fall Time

tf

37

DRAIN−SOURCE DIODE CHARACTERISTICS

Forward Diode Voltage

VSD

VGS = 0 V,

IS = −5 A

TJ = 25°C

−0.79

−1.2

V

TJ = 125°C

−0.64

Reverse Recovery Time

tRR

VGS = 0 V, dIS/dt = −100 A/ms,

IS = −5 A

20

ns

Charge Time

ta

15

Discharge Time

tb

5

Reverse Recovery Charge

QRR

19

nC

2. Pulse Test: pulse width v 300 ms, duty cycle v 2%.

3. Switching characteristics are independent of operating junction temperatures.

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