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NTTFS5116PL Datasheet(PDF) 2 Page - ON Semiconductor |
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NTTFS5116PL Datasheet(HTML) 2 Page - ON Semiconductor |
2 / 6 page NTTFS5116PL http://onsemi.com 2 ELECTRICAL CHARACTERISTICS (TJ = 25°C unless otherwise specified) Parameter Symbol Test Condition Min Typ Max Unit OFF CHARACTERISTICS Drain−to−Source Breakdown Voltage V(BR)DSS VGS = 0 V, ID = −250 mA −60 V Drain−to−Source Breakdown Voltage Temperature Coefficient V(BR)DSS/TJ 69.7 mV/°C Zero Gate Voltage Drain Current IDSS VGS = 0 V, VDS = −60 V TJ = 25°C −1.0 mA TJ = 125°C −100 Gate−to−Source Leakage Current IGSS VDS = 0 V, VGS = ±20 V ±100 nA ON CHARACTERISTICS (Note 2) Gate Threshold Voltage VGS(TH) VGS = VDS, ID = −250 mA −1 −3 V Negative Threshold Temperature Coefficient VGS(TH)/TJ −6.2 mV/°C Drain−to−Source On Resistance RDS(on) VGS = −10 V ID = −6 A 37 52 mW VGS = −4.5 V ID = −4.4 A 51 72 Forward Transconductance gFS VDS = −15 V, ID = −6 A 11 S CHARGES, CAPACITANCES AND GATE RESISTANCE Input Capacitance Ciss VGS = 0 V, f = 1.0 MHz, VDS = −30 V 1258 pF Output Capacitance Coss 127 Reverse Transfer Capacitance Crss 84 Total Gate Charge QG(TOT) VGS = −10 V, VDS = −48 V, ID = −5 A 25 nC VGS = −4.5 V, VDS = −48 V, ID = −5 A 14 Threshold Gate Charge QG(TH) VGS = −4.5 V, VDS = −48 V, ID = −5 A 1 nC Gate−to−Source Charge QGS 4 Gate−to−Drain Charge QGD 7 Plateau Voltage VGP 3.1 V Gate Resistance RG 5.3 W SWITCHING CHARACTERISTICS (Note 3) Turn−On Delay Time td(on) VGS = −4.5 V, VDS = −48 V, ID = −5 A, RG = 6 W 15 ns Rise Time tr 58 Turn−Off Delay Time td(off) 30 Fall Time tf 37 DRAIN−SOURCE DIODE CHARACTERISTICS Forward Diode Voltage VSD VGS = 0 V, IS = −5 A TJ = 25°C −0.79 −1.2 V TJ = 125°C −0.64 Reverse Recovery Time tRR VGS = 0 V, dIS/dt = −100 A/ms, IS = −5 A 20 ns Charge Time ta 15 Discharge Time tb 5 Reverse Recovery Charge QRR 19 nC 2. Pulse Test: pulse width v 300 ms, duty cycle v 2%. 3. Switching characteristics are independent of operating junction temperatures. |
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