© Semiconductor Components Industries, LLC, 2011

October, 2011 − Rev. 1

1

Publication Order Number:

NTD6415ANL/D

NTD6415ANL, NVD6415ANL

N-Channel Power MOSFET

100 V, 23 A, 56 mW, Logic

Level

Features

Parameter

Symbol

Value

Unit

Drain−to−Source Voltage

100

V

Gate−to−Source Voltage − Continuous

$20

V

Continuous Drain

Current

Steady

State

23

A

16

Power Dissipation

Steady

State

83

W

Pulsed Drain Current

80

A

Operating and Storage Temperature Range

−55 to

+175

°C

Source Current (Body Diode)

23

A

Single Pulse Drain−to−Source Avalanche

79

mJ

Lead Temperature for Soldering

Purposes, 1/8″ from Case for 10 Seconds

260

°C

THERMAL RESISTANCE RATINGS

Parameter

Symbol

Max

Unit

Junction−to−Case (Drain) − Steady State

1.8

°C/W

Junction−to−Ambient − Steady State (Note 1)

39

Stresses exceeding Maximum Ratings may damage the device. Maximum

Ratings are stress ratings only. Functional operation above the Recommended

Operating Conditions is not implied. Extended exposure to stresses above the

Recommended Operating Conditions may affect device reliability.

1. Surface mounted on FR4 board using 1 sq in pad size,

(Cu Area 1.127 sq in [2 oz] including traces).

http://onsemi.com

D

S

G

MARKING DIAGRAM

& PIN ASSIGNMENT

6415ANL = Device Code

Y

= Year

WW

= Work Week

G

= Pb−Free Package

DPAK

CASE 369AA

STYLE 2

4 Drain

3

Source

1

Gate

2

Drain

100 V

52 mW @ 10 V

23 A

See detailed ordering and shipping information in the package

dimensions section on page 2 of this data sheet.

ORDERING INFORMATION

56 mW @ 4.5 V

1 2

3

4