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NTD6415ANLT4G Datasheet(PDF) 1 Page - ON Semiconductor |
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NTD6415ANLT4G Datasheet(HTML) 1 Page - ON Semiconductor |
1 / 6 page © Semiconductor Components Industries, LLC, 2011 October, 2011 − Rev. 1 1 Publication Order Number: NTD6415ANL/D NTD6415ANL, NVD6415ANL N-Channel Power MOSFET 100 V, 23 A, 56 mW, Logic Level Features • Low RDS(on) • 100% Avalanche Tested • AEC−Q101 Qualified • AEC Q101 Qualified − NVD6415ANL • These Devices are Pb−Free and are RoHS Compliant MAXIMUM RATINGS (TJ = 25°C unless otherwise noted) Parameter Symbol Value Unit Drain−to−Source Voltage VDSS 100 V Gate−to−Source Voltage − Continuous VGS $20 V Continuous Drain Current Steady State TC = 25°C ID 23 A TC = 100°C 16 Power Dissipation Steady State TC = 25°C PD 83 W Pulsed Drain Current tp = 10 ms IDM 80 A Operating and Storage Temperature Range TJ, Tstg −55 to +175 °C Source Current (Body Diode) IS 23 A Single Pulse Drain−to−Source Avalanche Energy (VDD = 50 Vdc, VGS = 10 Vdc, IL(pk) = 23 A, L = 0.3 mH, RG = 25 W) EAS 79 mJ Lead Temperature for Soldering Purposes, 1/8″ from Case for 10 Seconds TL 260 °C THERMAL RESISTANCE RATINGS Parameter Symbol Max Unit Junction−to−Case (Drain) − Steady State RqJC 1.8 °C/W Junction−to−Ambient − Steady State (Note 1) RqJA 39 Stresses exceeding Maximum Ratings may damage the device. Maximum Ratings are stress ratings only. Functional operation above the Recommended Operating Conditions is not implied. Extended exposure to stresses above the Recommended Operating Conditions may affect device reliability. 1. Surface mounted on FR4 board using 1 sq in pad size, (Cu Area 1.127 sq in [2 oz] including traces). http://onsemi.com D S G MARKING DIAGRAM & PIN ASSIGNMENT 6415ANL = Device Code Y = Year WW = Work Week G = Pb−Free Package DPAK CASE 369AA STYLE 2 4 Drain 3 Source 1 Gate 2 Drain V(BR)DSS RDS(on) MAX ID MAX 100 V 52 mW @ 10 V 23 A See detailed ordering and shipping information in the package dimensions section on page 2 of this data sheet. ORDERING INFORMATION 56 mW @ 4.5 V 1 2 3 4 |
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