MTP3N50E

3

Motorola TMOS Power MOSFET Transistor Device Data

TYPICAL ELECTRICAL CHARACTERISTICS

VDS, DRAIN–TO–SOURCE VOLTAGE (VOLTS)

Figure 1. On–Region Characteristics

TJ, JUNCTION TEMPERATURE (°C)

Figure 2. Gate–Threshold Voltage Variation

With Temperature

VGS, GATE–TO–SOURCE VOLTAGE (VOLTS)

Figure 3. Transfer Characteristics

TJ, JUNCTION TEMPERATURE (°C)

Figure 4. Breakdown Voltage Variation

With Temperature

ID, DRAIN CURRENT (AMPS)

Figure 5. On–Resistance versus Drain Current

TJ, JUNCTION TEMPERATURE (°C)

Figure 6. On–Resistance versus Temperature

6

5

4

3

2

20

16

12

8

4

0

1.2

1.1

1

0.9

0.8

–50

–25

0

25

50

75

100

125

150

5

4

3

2

1

0

8

6

4

2

0

1.2

1.1

1

0.9

0.8

–50

0

50

100

150

8

6

4

2

5

4

3

2

1

0

2.5

2

1.5

1

0.5

TJ = 25°C

7 V

6 V

5 V

VDS = VGS

ID = 0.25 mA

TJ = –55°C

25

°C

100

°C

VGS = 0

ID = 250 µA

TJ = 100°C

25

°C

–55

°C

VGS = 10 V

VGS = 10 V

ID = 1.5 A

VGS = 10 V

4 V

VDS ≥ 10 V

1

0

2

6

10

14

18

0

–50

–25

0

25

50

75

100

125

150