MMBT4401L datasheet(2/7 Pages) ONSEMI

Part #	MMBT4401L

Description	Switching Transistor NPN Silicon

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Manufacturer	ONSEMI [ON Semiconductor]

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MMBT4401L, SMMBT4401L

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ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted)

Characteristic

Symbol

Min

Max

Unit

OFF CHARACTERISTICS

Collector−Emitter Breakdown Voltage (Note 3)

(IC = 1.0 mAdc, IB = 0)

V(BR)CEO

40

−

Vdc

Collector−Base Breakdown Voltage

(IC = 0.1 mAdc, IE = 0)

V(BR)CBO

60

−

Vdc

Emitter−Base Breakdown Voltage

(IE = 0.1 mAdc, IC = 0)

V(BR)EBO

6.0

−

Vdc

Base Cutoff Current

(VCE = 35 Vdc, VEB = 0.4 Vdc)

IBEV

−

0.1

mAdc

Collector Cutoff Current

(VCE = 35 Vdc, VEB = 0.4 Vdc)

ICEX

−

0.1

mAdc

ON CHARACTERISTICS (Note 3)

DC Current Gain

(IC = 0.1 mAdc, VCE = 1.0 Vdc)

(IC = 1.0 mAdc, VCE = 1.0 Vdc)

(IC = 10 mAdc, VCE = 1.0 Vdc)

(IC = 150 mAdc, VCE = 1.0 Vdc)

(IC = 500 mAdc, VCE = 2.0 Vdc)

hFE

20

40

80

100

40

−

300

−

Collector−Emitter Saturation Voltage

(IC = 150 mAdc, IB = 15 mAdc)

(IC = 500 mAdc, IB = 50 mAdc)

VCE(sat)

−

0.4

0.75

Vdc

Base −Emitter Saturation Voltage

(IC = 150 mAdc, IB = 15 mAdc)

(IC = 500 mAdc, IB = 50 mAdc)

VBE(sat)

0.75

−

0.95

1.2

Vdc

SMALL−SIGNAL CHARACTERISTICS

Current−Gain − Bandwidth Product

(IC = 20 mAdc, VCE = 10 Vdc, f = 100 MHz)

fT

250

−

MHz

Collector−Base Capacitance

(VCB = 5.0 Vdc, IE = 0, f = 1.0 MHz)

Ccb

−

6.5

pF

Emitter−Base Capacitance

(VEB = 0.5 Vdc, IC = 0, f = 1.0 MHz)

Ceb

−

30

pF

Input Impedance

(IC = 1.0 mAdc, VCE = 10 Vdc, f = 1.0 kHz)

hie

1.0

15

kW

Voltage Feedback Ratio

(IC = 1.0 mAdc, VCE = 10 Vdc, f = 1.0 kHz)

hre

0.1

8.0

X 10−4

Small−Signal Current Gain

(IC = 1.0 mAdc, VCE = 10 Vdc, f = 1.0 kHz)

hfe

40

500

−

Output Admittance

(IC = 1.0 mAdc, VCE = 10 Vdc, f = 1.0 kHz)

hoe

1.0

30

mmhos

SWITCHING CHARACTERISTICS

Delay Time

(VCC = 30 Vdc, VEB = 2.0 Vdc,

IC = 150 mAdc, IB1 = 15 mAdc)

td

−

15

ns

Rise Time

tr

−

20

Storage Time

(VCC = 30 Vdc, IC = 150 mAdc,

IB1 = IB2 = 15 mAdc)

ts

−

225

ns

Fall Time

tf

−

30

3. Pulse Test: Pulse Width ≤ 300 ms, Duty Cycle ≤ 2.0%.

Figure 1. Turn−On Time

Figure 2. Turn−Off Time

SWITCHING TIME EQUIVALENT TEST CIRCUITS

Scope rise time < 4.0 ns

*Total shunt capacitance of test jig connectors, and oscilloscope

+16 V

-2.0 V

< 2.0 ns

0

1.0 to 100

ms,

DUTY CYCLE

≈ 2.0%

1.0 k

W

+30 V

200

W

CS* < 10 pF

+16 V

-14 V

0

< 20 ns

1.0 to 100

ms,

DUTY CYCLE

≈ 2.0%

1.0 k

W

+30 V

200

W

CS* < 10 pF

-4.0 V

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