MMBT5551LT1 datasheet(1/2 Pages) WINNERJOIN

Part #	MMBT5551LT1

Description	NPN EPITAXIAL SILICON TRANSISTOR

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Manufacturer	WINNERJOIN [SHENZHEN YONGERJIA INDUSTRY CO.,LTD]

Direct Link	http://www.wej.cn

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WEJ

ELECTRONIC

CO.,LTD

HIGH VOLTAGE TRANSISTOR

Collector Dissipation:Pc-225mW(Ta=25 )

Collector-Emiller Voltage:

o

VCEO=160V

ABSOLUTE MAXIMUM RATINGS

(Ta=25 C)

o

Symbol

Rating

Unit

Collector-Base Voltage

Collector-Emitter Voltage

Emitter-Base Voltage

Collector Current

Collector Dissipation

Junction Temperature

Storage Temperature

Ta=25 C*

o

V

Ic

P

T

CBO

CEO

EBO

D

j

stg

180

160

6

600

225

150

-55~150

V

mA

mW

C

O

C

Characteristic

NPN EPITAXIAL SILICON TRANSISTOR

M M B T 5 5 5 1 L T 1

Electrical Characteristics

(Ta=25 C)

o

Parameter

Symbol

Condition

Unit

MAX.

TYP.

MIN.

Emitter-Base Breakdown Voltage

-Base Cutoff Current

DC Current Gain

Collector-Emitter Saturation Voltage

Current Gain-Bandwidth Product

Collector-Base Breakdown Voltage

Collector-Emitter Breakdown Voltage#

Collector

Emitter-Base Cutoff Current

DC Current Gain

Collector-Emitter Saturation Voltage

Base-Emitter Saturation Voltage

CEO

EBO

FE1

FE2

FE3

CE(sat)

BE(sat)

BV

I

h

V

BV

I

f

CBO

EBO

CBO

T

I =100 A

I =1mA

I =10 A

C

E

I =0

V

=120V, V =0

V

=4V, I =0

V

=5V, I =1mA

V

=5V, I =-10mA

V

=5V, I =50mA

I =50mA, I =5mA

I =10mA, I =1mA

I =50mA, I =1mA

I =10mA, I =1mA

V

=10V, I =10mA,f=100MHz

E

B

C

CB

C

CB

C

CE

C

CE

C

CE

C

B

C

B

C

B

C

B

CE

C

V

nA

180

160

6

80

30

50

250

0.5

0.15

1

300

MHz

V

*Total Device

Pulse Test: Pulse Width 300uS Duty cycle 2%

DEVICE MARKING:

2N5551S=Z1

#

Dissipation:FR=1X0.75X0.062 in Board Derate 25 C

o

100

3

1

2

SOT-23

1.BASE

2.EMITTER

3.COLLECTOR

1.

1.3

2.4

Unit:mm

Http:// www.wej.cn

E-mail:wej@yongerjia.com

WEJ ELECTRONIC CO.

RoHS

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