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VTT1225H Datasheet(PDF) 1 Page - List of Unclassifed Manufacturers |
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1 / 3 page Phototransistors www.optoelectronics.perkinelmer.com 19 Description Phototransistors are photodiode-amplifier combinations integrated within a single silicon chip. These are combined to overcome the major fault of photodiodes: unity gain. Many applications demand a greater output signal from the photodetector than can be generated by a photodiode alone. While the signal from a photodiode can always be amplified through use of an external op-amp or other circuitry, this approach is often not as practical or as cost-effective as the use of phototransistors. The phototransistor can be viewed as a photodiode whose output photocurrent is fed into the base of a conventional small-signal transistor. While not required for operation of the device as a photodetector, a base connection is often provided, allowing the designer the option of using base current to bias the transistor. The typical gain of a phototransistor can range from 100 to over 1500. Phototransistors can be used as ambient-light detectors. When used with a controllable light source, typically an IRED, they are often employed as the detector element for optoisolators and transmissive or reflective optical switches. All phototransistors are RoHS compliant. Features • Low-cost visible and near-IR photodetection • Available with gains from 100 to over 1500 • Moderately fast response times • Available in a wide range of packages including epoxy-coated, transfer-molded, cast, hermetic packages, chip form and surface mounting technology • Usable with almost any visible or near-infrared light source such as IREDs, neon, fluorescent, incandescent bulbs, lasers, flame sources, sunlight, etc. • Same general electrical characteristics as familiar signal transistors Typical Applications • Computer/business equipment • Write-protect control • Margin controls—printers • Industrial • LED light source—light pens • Security systems • Safety shields • Consumer • Coin counters • Lottery card readers • Position sensors—joysticks • Remote controllers—toys, appliances, audio/visual equipment • Games—laser tag • Camera shutter control Principle of Operation Phototransistors are solid-state light detectors that possess internal gain. They can be used to provide either an analog or digital output signal. Datasheets available upon request. Absolute Maximum Ratings Maximum Temperatures -25°C to 80°C (CR10TE, CR50TE) Storage and Operating: -40°C to 100°C -40°C to 110°C (VTT1015, VTT1016, VTT1017, VTT1115, VTT1116, and VTT1117) -40°C to 85°C (VTT7222, VTT7223, VTT7225, VTT7122, VTT7123, and VTT7125) -40°C to 70°C (VTT9002, VTT9003, VTT9102, and VTT9103) Continuous Power Dissipation: 50 mW 100 mW (VTT9002, VTT9003, VTT9102, and VTT9103) 200 mW (CR10TE, CR50TE) 250 mW (VTT1015, VTT1016, VTT1017, VTT1115, VTT1116, and VTT1117) Derate above 30°C: 0.71 mW/˚C 2.5 mW/˚C (VTT9002, VTT9003, VTT9102, and VTT9103) 3.12 mW/˚C (VTT1015, VTT1016, VTT1017, VTT1115, VTT1116, and VTT1117) 0.91 mW/˚C (VTT7122, VTT7123, VTT7125) Maximum Current: 25 mA 200 mA (VTT1015, VTT1016, VTT1017, VTT1115, VTT1116, and VTT1117) Lead-Soldering Temperature: 260°C (1.6 mm from case, 5 sec. max.) phototransistors |
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