PSMN6R0-25YLB datasheet(1/15 Pages) PHILIPS

Part #	PSMN6R0-25YLB

Description	N-channel 25 V 6.1 m廓 logic level MOSFET in LFPAK using NextPower technology

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1.

Product profile

1.1 General description

Logic level enhancement mode N-channel MOSFET in LFPAK package. This product is

designed and qualified for use in a wide range of industrial, communications and domestic

equipment.

1.2 Features and benefits

 High reliability Power SO8 package,

qualified to 175°C

 Low parasitic inductance and

resistance

 Optimised for 4.5V Gate drive utilising

NextPower Superjunction technology

 Ultra low QG, QGD, & QOSS for high

system efficiencies at low and high

loads

1.3 Applications

 DC-to-DC converters

 Load switching

 Synchronous buck regulator

1.4 Quick reference data

PSMN6R0-25YLB

N-channel 25 V 6.1 m

Ω logic level MOSFET in LFPAK using

NextPower technology

Rev. 2 — 31 October 2011

Product data sheet

Table 1.

Quick reference data

Symbol

Parameter

Conditions

Min

Typ

Max

Unit

VDS

drain-source voltage

25 °C

≤ Tj ≤ 175 °C

--25

V

ID

drain current

Tmb =25°C; VGS =10V;

see Figure 1

--73

A

Ptot

total power dissipation

Tmb =25°C; see Figure 2

--58

W

Tj

junction temperature

-55

-

175

°C

Static characteristics

RDSon

drain-source on-state resistance

VGS =4.5 V; ID =20 A; Tj =25°C;

see Figure 12

-6.7

7.9

m

Ω

VGS =10V; ID =20A; Tj =25 °C;

see Figure 12

-5.1

6.1

m

Ω

Dynamic characteristics

QGD

gate-drain charge

VGS =4.5 V; ID =20 A; VDS =12V;

see Figure 14; see Figure 15

-2.6

-nC

QG(tot)

total gate charge

-

9

-

nC

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