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AUIRF5305TRR Datasheet(PDF) 2 Page - International Rectifier |
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AUIRF5305TRR Datasheet(HTML) 2 Page - International Rectifier |
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2 / 13 page  AUIRFR/U5305 2 www.irf.com Repetitive rating; pulse width limited by max. junction temperature. (See Fig. 11) ISD ≤ -16A, di/dt ≤ -280A/µs, VDD ≤ V(BR)DSS, TJ ≤ 175°C VDD = -25V, starting TJ = 25°C, L = 2.1mH RG = 25Ω, IAS = -16A. (See Figure 12) Pulse width ≤ 300µs; duty cycle ≤ 2%. S D G S D G
This is applied for I-PAK, LS of D-PAK is measured between lead and center of die contact. Uses IRF5305 data and test conditions. * *When mounted on 1" square PCB (FR-4 or G-10 Material). For recommended footprint and soldering techniques refer to application note #AN-994. *** Uses typical socket mount. Static Electrical Characteristics @ TJ = 25°C (unless otherwise specified) Parameter Min. Typ. Max. Units V(BR)DSS Drain-to-Source Breakdown Voltage -55 ––– ––– V ∆V(BR)DSS/∆TJ Breakdown Voltage Temp. Coefficient ––– -0.034 ––– V/°C RDS(on) Static Drain-to-Source On-Resistance ––– ––– 0.065 Ω VGS(th) Gate Threshold Voltage -2.0 ––– -4.0 V gfs Forward Transconductance 8.0 ––– ––– S IDSS Drain-to-Source Leakage Current ––– ––– -25 ––– ––– -250 IGSS Gate-to-Source Forward Leakage ––– ––– 100 Gate-to-Source Reverse Leakage ––– ––– -100 Dynamic Electrical Characteristics @ TJ = 25°C (unless otherwise specified) Parameter Min. Typ. Max. Units Qg Total Gate Charge ––– ––– 63 Qgs Gate-to-Source Charge ––– ––– 13 Qgd Gate-to-Drain ("Miller") Charge ––– ––– 29 td(on) Turn-On Delay Time ––– 14 ––– tr Rise Time ––– 66 ––– td(off) Turn-Off Delay Time ––– 39 ––– tf Fall Time ––– 63 ––– LD Internal Drain Inductance Between lead, 6mm (0.25in.) LS Internal Source Inductance from package and center of die contact Ciss Input Capacitance ––– 1200 ––– Coss Output Capacitance ––– 520 ––– Crss Reverse Transfer Capacitance ––– 250 ––– Diode Characteristics Parameter Min. Typ. Max. Units IS Continuous Source Current (Body Diode) ISM Pulsed Source Current (Body Diode) Ã VSD Diode Forward Voltage ––– ––– -1.3 V trr Reverse Recovery Time ––– 71 110 ns Qrr Reverse Recovery Charge ––– 170 250 nC VGS = -20V VGS = 20V VDS = -44V VDS = -25V, ID = -16A h ID = -16A Conditions Conditions RD = 1.6 Ω See Fig.10 fh VGS = 0V VDS = -25V ƒ = 1.0MHz,see Fig.5 h MOSFET symbol showing the integral reverse p-n junction diode. TJ = 25°C, IS = -16A, VGS = 0V f TJ = 25°C, IF = -16A di/dt = 100A/µs fh Conditions VGS = 0V, ID = -250µA Reference to 25°C, ID = -1mA VGS = -10V, ID = -16A f VDS = VGS, ID = -250µA VDS = -55V, VGS = 0V VDS = -44V, VGS = 0V, TJ = 150°C VGS = -10V See Fig.6 and 13 fh VDD = -28V ID = -16A RG = 6.8 Ω ––– ––– ––– ––– A -31 -110 pF ––– ––– µA nA ns nC nH ––– ––– 4.5 7.5 |
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