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MP2207DN Datasheet(PDF) 2 Page - Monolithic Power Systems |
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MP2207DN Datasheet(HTML) 2 Page - Monolithic Power Systems |
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2 / 14 page  MP2207 – 16V, 4A, 1.3MHz SYNCHRONOUS STEP-DOWN CONVERTER MP2207 Rev. 0.92 www.MonolithicPower.com 2 9/1/2010 MPS Proprietary Information. Unauthorized Photocopy and Duplication Prohibited. Preliminary Specifications Subject to Change © 2010 MPS. All Rights Reserved. ORDERING INFORMATION Part Number* Package Top Marking Temperature MP2207DQ QFN10 (3mm x 3mm) S9 –40 °C to +85°C Part Number** Package Top Marking Temperature MP2207DN SOIC8E MP2207DN –40 °C to +85°C * For Tape & Reel, add suffix –Z (eg. MP2207DQ–Z). For RoHS Compliant Packaging, add suffix –LF (eg. MP2207DQ–LF–Z) ** For Tape & Reel, add suffix –Z (eg. MP2207DN–Z). For RoHS Compliant Packaging, add suffix –LF (eg. MP2207DN–LF–Z) PACKAGE REFERENCE TOP VIEW FB GND SW IN BS 1 2 3 4 5 EN/SYNC GND SW IN VCC 10 9 8 7 6 EXPOSED PAD ON BACKSIDE FB GND IN BS EN/SYNC SW SW VCC 1 2 3 4 8 7 6 5 TOP VIEW EXPOSED PAD ON BACKSIDE CONNECT TO GND QFN10 SOIC8E ABSOLUTE MAXIMUM RATINGS (1) IN to GND ....................................–0.3V to +18V SW to GND .......................... –0.5V to VIN + 0.3V .............................-2.5V to VIN + 2.5V for < 50ns FB, EN/SYNC, VCC to GND.......... –0.3V to +6.5V BS to SW ....................................–0.3V to +6.5V Continuous Power Dissipation (TA = +25°C) (2) QFN10 (3mm x 3mm) ................................ 2.5W SOIC8E...................................................... 2.5W Junction Temperature...............................150°C Lead Temperature ....................................260°C Storage Temperature............ –65°C TO +150°C Recommended Operating Conditions (3) Supply Voltage VIN ..............................3V to 16V Bias Voltage VCC ...................................3V to 6V Output Voltage VOUT..................0.8V to 0.9 x VIN Operating Temperature..............–40°C to +85°C Thermal Resistance (4) θJA θJC QFN10 (3mm x 3mm)............. 50 ...... 12... °C/W SOIC8E .................................. 50 ...... 10... °C/W Notes: 1) Exceeding these ratings may damage the device. 2) The maximum allowable power dissipation is a function of the maximum junction temperature TJ (MAX), the junction-to- ambient thermal resistance θJA, and the ambient temperature TA. The maximum allowable continuous power dissipation at any ambient temperature is calculated by PD (MAX) = (TJ (MAX)-TA)/θJA. Exceeding the maximum allowable power dissipation will cause excessive die temperature, and the regulator will go into thermal shutdown. Internal thermal shutdown circuitry protects the device from permanent damage. 3) The device is not guaranteed to function outside of its operating conditions. 4) Measured on JESD51-7, 4-layer PCB. |
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