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MP2212 Datasheet(PDF) 2 Page - Monolithic Power Systems

Part # MP2212
Description  16V, 3A, 600kHz Synchronous Step-Down Converter
Download  14 Pages
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Manufacturer  MPS [Monolithic Power Systems]
Direct Link  http://www.monolithicpower.com
Logo MPS - Monolithic Power Systems

MP2212 Datasheet(HTML) 2 Page - Monolithic Power Systems

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MP2212 – 16V, 3A, 600kHz SYNCHRONOUS STEP-DOWN CONVERTER
MP2212 Rev. 1.01
www.MonolithicPower.com
2
2/22/2012
MPS Proprietary Information. Patent Protected. Unauthorized Photocopy and Duplication Prohibited.
© 2012 MPS. All Rights Reserved.
ORDERING INFORMATION
Part Number
Package
Top Marking
Free Air Temperature (TA)
MP2212DQ*
QFN10 (3mm x 3mm)
Z7
-40
°C to +85°C
MP2212DN**
SOIC8E
MP2212DN
-40
°C to +85°C
* For Tape & Reel, add suffix –Z (e.g. MP2212DQ–Z);
For RoHS compliant packaging, add suffix –LF (e.g. MP2212DQ–LF–Z)
** For Tape & Reel, add suffix –Z (e.g. MP2212DN–Z);
For RoHS compliant packaging, add suffix –LF (e.g. MP2212DN–LF–Z)
PACKAGE REFERENCE
FB
GND
IN
BS
EN/SYNC
SW
SW
VCC
1
2
3
4
8
7
6
5
TOP VIEW
EXPOSED PAD
ON BACKSIDE
CONNECT TO GND
QFN10 (3mm x 3mm)
SOIC8E
ABSOLUTE MAXIMUM RATINGS (1)
IN to GND .....................................-0.3V to +18V
SW to GND ........................... -0.3V to VIN + 0.3V
.............................-2.5V to VIN + 2.5V for < 50ns
FB, EN/SYNC, VCC to GND...........-0.3V to +6.5V
BS to SW .....................................-0.3V to +6.5V
Continuous Power Dissipation
(TA = +25°C)
(2)
QFN10 (3mm x 3mm) ............... .......... ..... 2.5W
SOIC8E..................................... .......... ..... 2.5W
Junction Temperature...............................150°C
Lead Temperature ....................................260°C
Storage Temperature............... -65°C to +150°C
Recommended Operating Conditions
(3)
Supply Voltage VIN ..............................3V to 16V
Bias Voltage VCC ...................................3V to 6V
EN/SYNC Voltage...................no more than VCC
Output Voltage VOUT...................0.8V to 0.9x VIN
Maximum Junction Temp. (TJ) ................+125°C
Thermal Resistance
(4)
θJA
θJC
QFN10 (3mm x 3mm) .............50 ...... 12 ...
°C/W
SOIC8E...................................50 ...... 10 ...
°C/W
Notes:
1) Exceeding these ratings may damage the device.
2) The maximum allowable power dissipation is a function of the
maximum junction temperature TJ(MAX), the junction-to-
ambient thermal resistance θJA, and the ambient temperature
TA. The maximum allowable continuous power dissipation at
any ambient temperature is calculated by PD(MAX)=(TJ(MAX)-
TA)/ θJA. Exceeding the maximum allowable power dissipation
will cause excessive die temperature, and the regulator will go
into thermal shutdown. Internal thermal shutdown circuitry
protects the device from permanent damage.
3) The device is not guaranteed to function outside of its
operating conditions.
4) Measured on JESD51-7 4-layer PCB.


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