V6WM100C-M3

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Vishay General Semiconductor

Revision: 04-Dec-13

3

Document Number: 89969

THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT

Fig. 3 - Typical Instantaneous Forward Characteristics Per Diode

Fig. 4 - Typical Reverse Characteristics Per Diode

Fig. 5 - Typical Junction Capacitance Per Diode

Fig. 6 - Typical Transient Thermal Impedance Per Device

0.1

1

10

100

0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.9 1.0 1.1 1.2 1.3 1.4

Instantaneous Forward Voltage (V)

T

T

T

T

0.0001

0.001

0.01

0.1

1

10

100

20

30

40

50

60

70

80

90

100

Percent of Rated Peak Reverse Voltage (%)

T

T

T

T

10

100

1000

10 000

0.1

1

10

100

Reverse Voltage (V)

T

f = 1.0 MHz

V

0.1

1

10

0.01

0.1

1

10

100

t - Pulse Duration (s)

Junction to Case