MTP50N06VL

6

Motorola TMOS Power MOSFET Transistor Device Data

SAFE OPERATING AREA

Figure 11. Maximum Rated Forward Biased

Safe Operating Area

di/dt

trr

ta

tp

IS

0.25 IS

TIME

IS

tb

Figure 12. Maximum Avalanche Energy versus

Starting Junction Temperature

0.1

100

VDS, DRAIN–TO–SOURCE VOLTAGE (VOLTS)

Figure 13. Thermal Response

RDS(on) LIMIT

THERMAL LIMIT

PACKAGE LIMIT

10

VGS = 20 V

SINGLE PULSE

TC = 25°C

1

Figure 14. Diode Reverse Recovery Waveform

R

θJC(t) = r(t) RθJC

D CURVES APPLY FOR POWER

PULSE TRAIN SHOWN

READ TIME AT t1

TJ(pk) – TC = P(pk) R

θJC(t)

P(pk)

t1

t2

DUTY CYCLE, D = t1/t2

10

100

1000

1

dc

100

µs

1 ms

10 ms

10

µs

t, TIME (s)

1.00

0.10

0.01

0.2

D = 0.5

0.05

0.01

SINGLE PULSE

0.1

1.0E–05

1.0E–04

1.0E–03

1.0E–02

1.0E–01

1.0E+00

1.0E+01

0.02

TJ, STARTING JUNCTION TEMPERATURE (°C)

25

50

75

100

125

ID = 42 A

150

0

150

100

50

200

250

300

175