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Motorola TMOS Power MOSFET Transistor Device Data

Advance Information

Power Field Effect Transistor

N–Channel Enhancement–Mode Silicon Gate

This advanced high voltage TMOS E–FET is designed to

withstand high energy in the avalanche mode and switch efficiently.

This new high energy device also offers a drain–to–source diode

with fast recovery time. Designed for high voltage, high speed

switching applications in power supplies, PWM motor controls and

other inductive loads, the avalanche energy capability is specified

to eliminate the guesswork in designs where inductive loads are

switched and offer additional safety margin against unexpected

voltage transients.

• Avalanche Energy Capability Specified at Elevated

Temperature

• Source–to–Drain Diode Recovery Time Comparable to a

Discrete Fast Recovery Diode

• Low Stored Gate Charge for Efficient Switching

• Internal Source–to–Drain Diode Designed to Replace External

Zener Transient Suppressor–Absorbs High Energy in the

Avalanche Mode

• ESD Protected. Designed to Typically Withstand 400 V

Machine Model and 4000 V Human Body Model.

Rating

Symbol

Value

Unit

Drain–to–Source Voltage

VDSS

60

Vdc

Drain–to–Gate Voltage (RGS = 1.0 MΩ)

VDGR

60

Vdc

Gate–to–Source Voltage — Continuous

VGS

VGSM

± 20

± 40

Vdc

Vpk

Drain Current — Continuous @ TC = 25°C

ID

ID

IDM

55

35.5

165

Adc

Apk

Total Power Dissipation @ TC = 25°C

Derate above 25

°C

PD

113

0.91

Watts

W/

°C

Operating and Storage Temperature Range

TJ, Tstg

– 55 to 150

°C

Single Pulse Drain–to–Source Avalanche Energy — Starting TJ = 25°C

(VDD = 25 Vdc, VDS = 60 Vdc, VGS = 10 Vdc, Peak IL = 55 Apk, L = 0.3 mH, RG = 25 Ω)

EAS

454

mJ

Thermal Resistance — Junction–to–Case

R

θJC

R

θJA

1.1

62.5

°C/W

Maximum Lead Temperature for Soldering Purposes, 1/8

″ from case for 10 seconds

TL

260

°C

This document contains information on a new product. Specifications and information herein are subject to change without notice.

E–FET is a trademark of Motorola, Inc. TMOS is a registered trademark of Motorola, Inc.

Order this document

by MTP55N06Z/D

MOTOROLA

SEMICONDUCTOR TECHNICAL DATA

D

S

G

™

MTP55N06Z

TMOS POWER FET

55 AMPERES

60 VOLTS

RDS(on) = 18 mΩ

CASE 221A–06, Style 5

TO–220AB

© Motorola, Inc. 1997

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