STB25N80K5 datasheet(3/22 Pages) STMICROELECTRONICS

Part #	STB25N80K5

Description	N-channel 800 V, 0.19 typ., 19.5 A SuperMESH 5 Power MOSFET in D2PAK

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Manufacturer	STMICROELECTRONICS [STMicroelectronics]

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STB25N80K5, STF25N80K5, STP25N80K5, STW25N80K5

Electrical ratings

1

Electrical ratings

Table 2. Absolute maximum ratings

Symbol

Parameter

Value

Unit

D2PAK,

TO-220, TO-247

TO-220FP

VGS

Gate- source voltage

± 30

V

ID

Drain current (continuous) at TC = 25 °C

19.5

19.5(1)

1.

Limited by package.

A

ID

Drain current (continuous) at TC = 100 °C

12.3

12.3 (1)

A

IDM

(2)

2.

Pulse width limited by safe operating area.

Drain current (pulsed)

78

78 (1)

A

PTOT

Total dissipation at TC = 25 °C

250

40

W

IAR

Max current during repetitive or single

pulse avalanche

(pulse width limited by Tjmax )

6.5

A

EAS

Single pulse avalanche energy

(starting TJ = 25 °C, ID=IAS, VDD= 50 V)

200

mJ

Viso

Insulation withstand voltage (RMS) from

all three leads to external heat sink

(t=1 s;TC=25 °C)

2500

V

dv/dt (3)

3.

ISD ≤ 19.5 A, di/dt ≤ 100 A/µs, VPeak ≤ V(BR)DSS

Peak diode recovery voltage slope

6

V/ns

Tj

Tstg

Operating junction temperature

Storage temperature

-55 to 150

°C

Table 3. Thermal data

Symbol

Parameter

Value

Unit

TO-220 TO-247 D2PAK TO-220FP

Rthj-case

Thermal resistance junction-case max

0.5

3.1

°C/W

Rthj-amb

Thermal resistance junction-amb max

62.5

50

62.5

Rthj-pcb

(1)

1.

When mounted on 1inch² FR-4 board, 2 oz Cu.

Thermal resistance junction-pcb max

30

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