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STP13N80K5 Datasheet(PDF) 8 Page - STMicroelectronics |
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STP13N80K5 Datasheet(HTML) 8 Page - STMicroelectronics |
8 / 20 page Electrical characteristics STB13N80K5, STF13N80K5, STP13N80K5 8/20 DocID024348 Rev 3 Figure 14. Normalized gate threshold voltage vs temperature Figure 15. Normalized on-resistance vs temperature Figure 16. Source-drain diode forward characteristics Figure 17. Output capacitance stored energy VGS(th) 0.6 0.4 0.2 0 -100 TJ(°C) (norm) -50 0.8 50 0 100 ID=100µA 150 1 1.2 AM15696v1 RDS(on) 2 1.5 1 0.5 -100 TJ(°C) (norm) -50 50 0 100 2.5 0 VGS=10V ID=6A 150 AM15697v1 VSD 0 4 ISD(A) (V) 2 6 8 0.5 0.6 0.7 0.8 0.9 1 TJ=-50°C TJ=150°C TJ=25°C 10 AM15698v1 Eoss 6 4 2 0 0 100 VDS(V) (µJ) 400 8 200 300 10 12 500 600 700 800 AM15695v1 Figure 18. Maximum avalanche energy vs. starting Tj EAS 0 40 TJ(°C) (mJ) 20 100 60 80 0 20 40 60 80 120 140 100 120 140 AM15700v1 |
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Similar Description - STP13N80K5 |
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