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LY61L5128LL-10LL Datasheet(PDF) 9 Page - Lyontek Inc. |
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LY61L5128LL-10LL Datasheet(HTML) 9 Page - Lyontek Inc. |
9 / 15 page LY61L5128 Rev. 2.4 512K X 8 BIT HIGH SPEED CMOS SRAM Lyontek Inc. reserves the rights to change the specifications and products without notice. 5F, No. 2, Industry E. Rd. IX, Science-Based Industrial Park, Hsinchu 300, Taiwan. TEL: 886-3-6668838 FAX: 886-3-6668836 8 ® DATA RETENTION CHARACTERISTICS PARAMETER SYMBOL TEST CONDITION MIN. TYP. MAX. UNIT VCC for Data Retention VDR CE# V ≧ CC - 0.2V 2.0 - 3.6 V Data Retention Current IDR VCC = 2.0V CE# V ≧ CC - 0.2V others at 0.2V or VCC - 0.2V 10/12/15 - - mA 20/25 - 0.5 1 mA 20/25LL - 10 50 µA Chip Disable to Data Retention Time tCDR See Data Retention Waveforms (below) 0 - - ns Recovery Time tR tRC* - - ns tRC* = Read Cycle Time DATA RETENTION WAVEFORM Vcc CE# VDR ≧ 2.0V CE# V ≧ cc-0.2V Vcc(min.) VIH tR tCDR VIH Vcc(min.) |
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