LY61L2568

Rev. 1.0

256K X 8 BIT HIGH SPEED CMOS SRAM

5F, No. 2, Industry E. Rd. IX, Science-Based Industrial Park, Hsinchu 300, Taiwan.

TEL: 886-3-6668838

FAX: 886-3-6668836

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FEATURES

Fast access time : 20/25ns

Very low power consumption:

Operating current(Normal version):

110/90mA(TYP.)

Operating current(20/25ns LL version):

40/35mA(TYP.)

Standby current(Normal version):

0.5mA(TYP.)

Standby current(20/25ns LL version):

10µA(TYP.)

Single 3.3V power supply

All inputs and outputs TTL compatible

Fully static operation

Tri-state output

Data retention voltage : 2.0V (MIN.)

Green package available

Package : 44-pin 400 mil TSOP-II

GENERAL DESCRIPTION

The LY61L2568 is a 2,097,152-bit low power CMOS

static random access memory organized as 262,144

words by 8 bits. It is fabricated using very high

performance, high reliability CMOS technology. Its

standby current is stable within the range of

operating temperature.

The LY61L2568 is well designed for very low power

system applications, and particularly well suited for

battery back-up nonvolatile memory application.

The LY61L2568 operates from a single power

supply of 3.3V and all inputs and outputs are fully

TTL compatible

PRODUCT FAMILY

Product

Family

Operating

Temperature

Vcc Range

Speed

Power Dissipation

Operating(Icc,TYP.)

LY61L2568

0 ~ 70℃

3.0 ~ 3.6V

20/25ns

0.5mA

110/90mA

LY61L2568(I)

-40 ~ 85℃

3.0 ~ 3.6V

20/25ns

0.5mA

110/90mA

LY61L2568(LL)

0 ~ 70℃

3.0 ~ 3.6V

20/25ns

10µA(LL)

40/35mA(LL)

LY61L2568(LLI)

-40 ~ 85℃

3.0 ~ 3.6V

20/25ns

10µA(LL)

40/35mA(LL)