LY61L5128

Rev. 2.4

512K X 8 BIT HIGH SPEED CMOS SRAM

5F, No. 2, Industry E. Rd. IX, Science-Based Industrial Park, Hsinchu 300, Taiwan.

TEL: 886-3-6668838

FAX: 886-3-6668836

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FEATURES

Fast access time : 10/12/15/20/25ns

Very low power consumption:

Operating current(Normal version):

180/160/140/80/70mA(MAX.)

Standby current:

12mA(MAX. for 10/12/15ns)

5mA(MAX. for 20/25ns)

100µA( (MAX. for 20/25ns LL version)

Single 3.3V power supply

All inputs and outputs TTL compatible

Fully static operation

Tri-state output

Data retention voltage : 2.0V (MIN.)

Green package available

Package : 32-pin 8mm x 20mm TSOP-I

32-pin 8mm x 13.4mm STSOP

44-pin 400 mil TSOP-II

36-ball 6mm x 8mm TFBGA

GENERAL DESCRIPTION

The LY61L5128 is a 4,194,304-bit low power CMOS

static random access memory organized as 524,288

words by 8 bits. It is fabricated using very high

performance, high reliability CMOS technology. Its

standby current is stable within the range of

operating temperature.

The LY61L5128 is well designed for very low power

system applications, and particularly well suited for

battery back-up nonvolatile memory application.

The LY61L5128 operates from a single power

supply of 3.3V and all inputs and outputs are fully

TTL compatible

PRODUCT FAMILY

Product

Family

Operating

Temperature

Vcc Range

Speed

Power Dissipation

Operating(Icc,MAX.)

LY61L5128

0 ~ 70℃

3.15/3.0 ~ 3.6V

10/12/15ns

12mA

180/160/140mA

LY61L5128(E)

-20 ~ 80℃

3.15/3.0 ~ 3.6V

10/12/15ns

12mA

180/160/140mA

LY61L5128(I)

-40 ~ 85℃

3.15/3.0 ~ 3.6V

10/12/15ns

12mA

180/160/140mA

LY61L5128

0 ~ 70℃

3.0 ~ 3.6V

20/25ns

5mA

80/70mA

LY61L5128(E)

-20 ~ 80℃

3.0 ~ 3.6V

20/25ns

5mA

80/70mA

LY61L5128(I)

-40 ~ 85℃

3.0 ~ 3.6V

20/25ns

5mA

80/70mA

LY61L5128(LL)

0 ~ 70℃

3.0 ~ 3.6V

20/25ns

100µA

80/70mA

LY61L5128(LLE) -20 ~ 80℃

3.0 ~ 3.6V

20/25ns

100µA

80/70mA

LY61L5128(LLI)

-40 ~ 85℃

3.0 ~ 3.6V

20/25ns

100µA

80/70mA