LY61L5128

Rev. 2.4

512K X 8 BIT HIGH SPEED CMOS SRAM

5F, No. 2, Industry E. Rd. IX, Science-Based Industrial Park, Hsinchu 300, Taiwan.

TEL: 886-3-6668838

FAX: 886-3-6668836

7

®

WRITE CYCLE 1

(WE# Controlled) (1,2,3,5,6)

Dout

Din

Data Valid

(4)

High-Z

WE#

CE#

Address

(4)

WRITE CYCLE 2

(CE# Controlled) (1,2,5,6)

Dout

Din

Data Valid

(4)

High-Z

WE#

CE#

Address

Notes :

1.WE#, CE# must be high during all address transitions.

2.A write occurs during the overlap of a low CE#, low WE#.

placed on the bus.

4.During this period, I/O pins are in the output state, and input signals must not be applied.

5.If the CE# low transition occurs simultaneously with or after WE# low transition, the outputs remain in a high impedance state.