LY61L6416

Rev. 2.0

64K X 16 BIT HIGH SPEED CMOS SRAM

5F, No. 2, Industry E. Rd. IX, Science-Based Industrial Park, Hsinchu 300, Taiwan.

TEL: 886-3-6668838

FAX: 886-3-6668836

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FEATURES

Fast access time : 8/10/12/15/20ns

Low power consumption:

Operating current : 115/105/95/85/70mA (TYP.)

Standby current :

0.6mA (TYP.)

100µA( (MAX. for 20ns LL version)

Single 3.3V power supply

All inputs and outputs TTL compatible

Fully static operation

Tri-state output

Data byte control : LB# (DQ0 ~ DQ7)

UB# (DQ8 ~ DQ15)

Data retention voltage : 2.0V (MIN.)

Green package available

Package : 44-pin 400 mil TSOP-II

48-ball 6mm x 8mm TFBGA

GENERAL DESCRIPTION

The LY61L6416 is a 1,048,576-bit low power CMOS

static random access memory organized as 65,536

words by 16 bits. It is fabricated using very high

performance, high reliability CMOS technology. Its

standby current is stable within the range of

operating temperature.

The LY61L6416 is well designed for low power

application, and particularly well suited for battery

back-up nonvolatile memory application.

The LY61L6416 operates from a single power

supply of 3.3V and all inputs and outputs are fully

TTL compatible

PRODUCT FAMILY

Product

Family

Operating

Temperature

Vcc Range

Speed

Power Dissipation

Operating(Icc,TYP.)

LY61L6416

0 ~ 70℃

3.15 ~ 3.6V

8/10ns

0.6mA(TYP.)

115/105mA

LY61L6416

0 ~ 70℃

3.0 ~ 3.6V

12/15/20ns

0.6mA(TYP.)

95/85/70mA

LY61L6416(LL)

0 ~ 70℃

3.0 ~ 3.6V

20ns

100µA(MAX.)

70mA

LY61L6416(E)

-20 ~ 80℃

3.15 ~ 3.6V

8/10ns

0.6mA(TYP.)

115/105mA

LY61L6416(E)

-20 ~ 80℃

3.0 ~ 3.6V

12/15/20ns

0.6mA(TYP.)

95/85/70mA

LY61L6416(LLE)

-20 ~ 80℃

3.0 ~ 3.6V

20ns

100µA(MAX.)

70mA

LY61L6416(I)

-40 ~ 85℃

3.15 ~ 3.6V

8/10ns

0.6mA(TYP.)

115/105mA

LY61L6416(I)

-40 ~ 85℃

3.0 ~ 3.6V

12/15/20ns

0.6mA(TYP.)

95/85/70mA

LY61L6416(LLI)

-40 ~ 85℃

3.0 ~ 3.6V

20ns

100µA(MAX.)

70mA