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2743019447 Datasheet(PDF) 2 Page - Freescale Semiconductor, Inc |
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2743019447 Datasheet(HTML) 2 Page - Freescale Semiconductor, Inc |
2 / 15 page 2 RF Device Data Freescale Semiconductor MRF6V4300NR1 MRF6V4300NBR1 Table 2. Thermal Characteristics Characteristic Symbol Value (1,2) Unit Thermal Resistance, Junction to Case Case Temperature 83°C, 300 W CW RθJC 0.24 °C/W Table 3. ESD Protection Characteristics Test Methodology Class Human Body Model (per JESD22--A114) 1C (Minimum) Machine Model (per EIA/JESD22--A115) A (Minimum) Charge Device Model (per JESD22--C101) IV (Minimum) Table 4. Moisture Sensitivity Level Test Methodology Rating Package Peak Temperature Unit Per JESD22--A113, IPC/JEDEC J--STD--020 3 260 °C Table 5. Electrical Characteristics (TA =25°C unless otherwise noted) Characteristic Symbol Min Typ Max Unit Off Characteristics Gate--Source Leakage Current (VGS =5 Vdc, VDS =0 Vdc) IGSS — — 10 μAdc Drain--Source Breakdown Voltage (ID = 150 mA, VGS =0 Vdc) V(BR)DSS 110 — — Vdc Zero Gate Voltage Drain Leakage Current (VDS =50 Vdc, VGS =0 Vdc) IDSS — — 50 μAdc Zero Gate Voltage Drain Leakage Current (VDS = 100 Vdc, VGS =0 Vdc) IDSS — — 2.5 mA On Characteristics Gate Threshold Voltage (VDS =10 Vdc, ID = 800 μAdc) VGS(th) 0.9 1.65 2.4 Vdc Gate Quiescent Voltage (VDD =50 Vdc, ID = 900 mAdc, Measured in Functional Test) VGS(Q) 1.9 2.7 3.4 Vdc Drain--Source On--Voltage (VGS =10 Vdc, ID =2 Adc) VDS(on) — 0.25 — Vdc Dynamic Characteristics Reverse Transfer Capacitance (VDS =50 Vdc ± 30 mV(rms)ac @ 1 MHz, VGS =0 Vdc) Crss — 2.8 — pF Output Capacitance (VDS =50 Vdc ± 30 mV(rms)ac @ 1 MHz, VGS =0 Vdc) Coss — 105 — pF Input Capacitance (VDS =50 Vdc, VGS =0 Vdc ± 30 mV(rms)ac @ 1 MHz) Ciss — 304 — pF Functional Tests (In Freescale Test Fixture, 50 ohm system) VDD =50 Vdc, IDQ = 900 mA, Pout = 300 W, f = 450 MHz, CW Power Gain Gps 20 22 24 dB Drain Efficiency ηD 58 60 — % Input Return Loss IRL — --16 --9 dB 1. MTTF calculator available at http://www.freescale.com/rf. Select Software & Tools/Development Tools/Calculators to access MTTF calculators by product. 2. Refer to AN1955, Thermal Measurement Methodology of RF Power Amplifiers. Go to http://www.freescale.com/rf. Select Documentation/Application Notes -- AN1955. ATTENTION: The MRF6V4300N and MRF6V4300NB are high power devices and special considerations must be followed in board design and mounting. Incorrect mounting can lead to internal temperatures which exceed the maximum allowable operating junction temperature. Refer to Freescale Application Note AN3263 (for bolt down mounting) or AN1907 (for solder reflow mounting) PRIOR TO STARTING SYSTEM DESIGN to ensure proper mounting of these devices. |
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