C5750JF1H226ZT datasheet(5/15 Pages) FREESCALE

Part #	C5750JF1H226ZT

Description	RF Power Field Effect Transistors N--Channel Enhancement--Mode Lateral MOSFETs

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Manufacturer	FREESCALE [Freescale Semiconductor, Inc]

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MRF6V4300NR1 MRF6V4300NBR1

5

RF Device Data

Freescale Semiconductor

TYPICAL CHARACTERISTICS

50

1

1000

020

10

VDS, DRAIN--SOURCE VOLTAGE (VOLTS)

Figure 4. Capacitance versus Drain--Source Voltage

30

Ciss

1

100

1

TC =25°C

10

VDS, DRAIN--SOURCE VOLTAGE (VOLTS)

Figure 5. DC Safe Operating Area

40

0

10

0

DRAIN VOLTAGE (VOLTS)

9

8

7

6

20

120

Figure 6. DC Drain Current versus Drain Voltage

60

600

18

23

IDQ = 1350 mA

10

22

21

20

Pout, OUTPUT POWER (WATTS) CW

Figure 7. CW Power Gain versus Output Power

VDD =50 Vdc

f = 450 MHz

100

10

40

100

5

VGS =3 V

Coss

Crss

80

100

4

3

2

1

2.75 V

2.63 V

2.5 V

2.25 V

19

100

1125 mA

900 mA

450 mA

100

--55

--15

10

Pout, OUTPUT POWER (WATTS) PEP

--25

--30

--35

--40

600

Figure 8. Third Order Intermodulation Distortion

versus Output Power

VDD = 50 Vdc, f1 = 450 MHz, f2 = 450.1 MHz

Two--Tone Measurements, 100 kHz Tone Spacing

--45

--50

--20

IDQ = 450 mA

1350 mA

900 mA

650 mA

1125 mA

38

50

60

28

31

29

58

56

54

52

Pin, INPUT POWER (dBm)

Figure 9. CW Output Power versus Input Power

30

34

P3dB = 56.06 dBm (403 W)

Actual

Ideal

P1dB = 55.15 dBm (327 W)

VDD =50 Vdc,IDQ = 900 mA

f = 450 MHz

Measured with ±30 mV(rms)ac @ 1 MHz

VGS =0 Vdc

650 mA

--60

--10

--5

0

59

57

55

53

51

33

32

35

36

37

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C5750JF1H226ZT Datasheet(PDF) 5 Page - Freescale Semiconductor, Inc

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