PSMN016-100XS

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Product data sheet

Rev. 4 — 6 March 2012

7 of 14

NXP Semiconductors

PSMN016-100XS

N-channel 100V 16 m

Ω standard level MOSFET in TO220F (SOT186A)

Source-drain diode

source-drain voltage

-

0.8

1.2

V

reverse recovery time

-54

-ns

recovered charge

-

126

-

nC

Table 7.

Symbol

Parameter

Conditions

Min

Typ

Max

Unit

Fig 6.

Output characteristics; drain current as a

function of drain-source voltage; typical values

Fig 7.

Drain-source on-state resistance as a function

of gate-source voltage; typical values

Fig 8.

Forward transconductance as a function of

drain current; typical values

Fig 9.

Transfer characteristics; drain current as a

function of gate-source voltage; typical values

003aag619

0

20

40

60

80

100

01

23

4

V

I

D

(A)

V

4.6

4.8

5.0

6.0

4.4

003aag620

0

10

20

30

40

4

8

12

16

20

V

R

DSon

(m

Ω)

003aag621

0

20

40

60

80

100

020

40

60

80

I

g

fs

(S)

003aag622

0

20

40

60

80

0246

V

I

D

(A)

T