LY61L12816

Rev. 1.5

128K X 16 BIT HIGH SPEED CMOS SRAM

5F, No. 2, Industry E. Rd. IX, Science-Based Industrial Park, Hsinchu 300, Taiwan.

TEL: 886-3-6668838

FAX: 886-3-6668836

1

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FEATURES

Fast access time : 10/12/15/20/25ns

Very low power consumption:

Operating current(Normal version):

200/180/150/110/90mA(TYP.)

Operating current(15/20/25ns LL version):

45/40/35mA(TYP.)

Standby current(Normal version):

0.5mA(TYP.)

Standby current(15/20/25ns LL version):

20µA(TYP.)

Single 3.3V power supply

All inputs and outputs TTL compatible

Fully static operation

Tri-state output

Data byte control : LB# (DQ0 ~ DQ7)

UB# (DQ8 ~ DQ15)

Data retention voltage : 2.0V (MIN.)

Green package available

Package : 44-pin 400 mil TSOP-II

48-ball 6mm x 8mm TFBGA

GENERAL DESCRIPTION

The LY61L12816 is a 2,087,152-bit low power

CMOS static random access memory organized as

131,072 words by 16 bits. It is fabricated using very

high performance, high reliability CMOS technology.

Its standby current is stable within the range of

operating temperature.

The LY61L12816 is well designed for low power

application, and particularly well suited for battery

back-up nonvolatile memory application.

The LY61L12816 operates from a single power

supply of 3.3V and all inputs and outputs are fully

TTL compatible

PRODUCT FAMILY

Product

Family

Operating

Temperature

Vcc Range

Speed

Power Dissipation

Operating(Icc,TYP.)

LY61L12816

0 ~ 70℃

3.15 ~ 3.6V

10/12ns

0.5mA

200/180mA

LY61L12816(E)

-20 ~ 80℃

3.15 ~ 3.6V

10/12ns

0.5mA

200/180mA

LY61L12816(I)

-40 ~ 85℃

3.15 ~ 3.6V

10/12ns

0.5mA

200/180mA

LY61L12816

0 ~ 70℃

3.0 ~ 3.6V

15/20/25ns

0.5mA

150/110/90mA

LY61L12816(LL)

0 ~ 70℃

3.0 ~ 3.6V

15/20/25ns

20µA(LL)

45/40/35mA(LL)