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LY62L51216GL-70LLT Datasheet(PDF) 2 Page - Lyontek Inc. |
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LY62L51216GL-70LLT Datasheet(HTML) 2 Page - Lyontek Inc. |
2 / 13 page LY62L51216 Rev. 1.6 512K X 16 BIT LOW POWER CMOS SRAM Lyontek Inc. reserves the rights to change the specifications and products without notice. 5F, No. 2, Industry E. Rd. IX, Science-Based Industrial Park, Hsinchu 300, Taiwan. TEL: 886-3-6668838 FAX: 886-3-6668836 1 FEATURES Fast access time : 55/70ns Low power consumption: Operating current : 30/20mA (TYP.) Standby current : 5 A (TYP.) LL-version 1.5 A (TYP.) SL-version Single 2.7V ~ 3.6V power supply All inputs and outputs TTL compatible Fully static operation Tri-state output Data byte control : LB# (DQ0 ~ DQ7) UB# (DQ8 ~ DQ15) Data retention voltage : 1.2V (MIN.) Green package available Package : 44-pin 400mil TSOP-II 48-ball 6mm x 8mm TFBGA GENERAL DESCRIPTION The LY62L51216 is a 8,388,608-bit low power CMOS static random access memory organized as 524,288 words by 16 bits. It is fabricated using very high performance, high reliability CMOS technology. Its standby current is stable within the range of operating temperature. The LY62L51216 is well designed for low power application, and particularly well suited for battery back-up nonvolatile memory application. The LY62L51216 operates from a single power supply of 2.7V ~ 3.6V and all inputs and outputs are fully TTL compatible PRODUCT FAMILY Product Family Operating Temperature Vcc Range Speed Power Dissipation Standby(ISB1,TYP.) Operating(Icc,TYP.) LY62L51216 0 ~ 70℃ 2.7 ~ 3.6V 55/70ns 5µA(LL)/1.5µA(SL) 30/20mA LY62L51216(I) -40 ~ 85℃ 2.7 ~ 3.6V 55/70ns 5µA(LL)/1.5µA(SL) 30/20mA FUNCTIONAL BLOCK DIAGRAM CONTROL CIRCUIT CE# WE# OE# DECODER 512Kx16 MEMORY ARRAY COLUMN I/O A0-A18 Vcc Vss DQ8-DQ15 Upper Byte DQ0-DQ7 Lower Byte I/O DATA CIRCUIT LB# UB# PIN DESCRIPTION SYMBOL DESCRIPTION A0 - A18 Address Inputs DQ0 – DQ15 Data Inputs/Outputs CE# Chip Enable Input WE# Write Enable Input OE# Output Enable Input LB# Lower Byte Control UB# Upper Byte Control VCC Power Supply VSS Ground |
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