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LY65W1024JL-25LLIT Datasheet(PDF) 4 Page - Lyontek Inc. |
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LY65W1024JL-25LLIT Datasheet(HTML) 4 Page - Lyontek Inc. |
4 / 13 page LY65W1024 Rev. 1.1 128K X 8 BIT HIGH SPEED CMOS SRAM Lyontek Inc. reserves the rights to change the specifications and products without notice. 5F, No. 2, Industry E. Rd. IX, Science-Based Industrial Park, Hsinchu 300, Taiwan. TEL: 886-3-6668838 FAX: 886-3-6668836 3 ® DC ELECTRICAL CHARACTERISTICS PARAMETER SYMBOL TEST CONDITION MIN. TYP. *4 MAX. UNIT Supply Voltage VCC 3.0 3.3 5.5 V Input High Voltage VIH *1 VCC=3.0~3.6V 2.0 - VCC+0.5 V VCC=4.5~5.5V 2.4 - VCC+0.5 V Input Low Voltage VIL *2 VCC=3.0~3.6V - 0.5 - 0.6 V VCC=4.5~5.5V - 0.5 - 0.8 V Input Leakage Current ILI VCC ≧ VIN ≧ VSS - 1 - 1 µA Output Leakage Current ILO VCC ≧ VOUT ≧ VSS, Output Disabled - 1 - 1 µA Output High Voltage VOH IOH = -4mA 2.2 - - V Output Low Voltage VOL IOL = 8mA - - 0.4 V Average Operating Power supply Current ICC Cycle time = Min. CE# = VIL and CE2 = VIH, II/O = 0mA, Others at VIL or VIH - 30 55 mA Standby Power Supply Current ISB CE# = VIH or CE2 = VIL Others at VIL or VIH - 0.3 5 mA ISB1 CE# V ≧ CC -0.2V or CE2≦0.2V Others at 0.2V or VCC-0.2V - 1 50 µA Notes: 1. VIH(max) = VCC + 3.0V for pulse width less than 10ns. 2. VIL(min) = VSS - 3.0V for pulse width less than 10ns. 3. Over/Undershoot specifications are characterized, not 100% tested. 4. Typical values are included for reference only and are not guaranteed or tested. Typical valued are measured at VCC = VCC(TYP.) and TA = 25℃ CAPACITANCE (TA = 25 , f ℃ = 1.0MHz) PARAMETER SYMBOL MIN. MAX UNIT Input Capacitance CIN - 6pF Input/Output Capacitance CI/O - 8pF Note : These parameters are guaranteed by device characterization, but not production tested. AC TEST CONDITIONS Input Pulse Levels 0.2V to VCC -0.2V Input Rise and Fall Times 3ns Input and Output Timing Reference Levels 1.5V Output Load CL = 30pF + 1TTL, IOH/IOL = -4mA/8mA |
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