LY6164

Rev. 1.4

8K X 8 BIT HIGH SPEED CMOS SRAM

5F, No. 2, Industry E. Rd. IX, Science-Based Industrial Park, Hsinchu 300, Taiwan.

TEL: 886-3-6668838

FAX: 886-3-6668836

1

®

FEATURES

Fast access time : 8/10/12/15ns

Low power consumption:

Operating current : 110/100/90/80mA (TYP.)

Standby current : 1mA (TYP.)

Single 5V power supply

All inputs and outputs TTL compatible

Fully static operation

Tri-state output

Data retention voltage : 2.0V (MIN.)

Green package available

Package : 28-pin 300 mil SOJ

28-pin 300 mil Skinny P-DIP

28-pin 8mm x 13.4mm STSOP

GENERAL DESCRIPTION

The LY6164 is a 65,536-bit high speed CMOS static

random access memory organized as 8,192 words

by

8

bits.

It

is

fabricated

using

very

high

performance, high reliability CMOS technology. Its

standby current is stable within the range of

operating temperature.

The LY6164 is well designed for high speed system

applications, and particularly well suited for battery

back-up nonvolatile memory application.

The LY6164 operates from a single power supply

of 5V and all inputs and outputs are fully TTL

compatible

PRODUCT FAMILY

Product

Family

Operating

Temperature

Vcc Range

Speed

Power Dissipation

LY6164

0 ~ 70℃

4.5 ~ 5.5V

8/10/12/15ns

1mA

110/100/90/80mA

LY6164(E)

-20 ~ 80℃

4.5 ~ 5.5V

8/10/12/15ns

1mA

110/100/90/80mA

LY6164(I)

-40 ~ 85℃

4.5 ~ 5.5V

8/10/12/15ns

1mA

110/100/90/80mA

FUNCTIONAL BLOCK DIAGRAM

DECODER

I/O DATA

CIRCUIT

CONTROL

CIRCUIT

8Kx8

MEMORY ARRAY

COLUMN I/O

A0-A12

Vcc

Vss

DQ0-DQ7

CE#

WE#

OE#

CE2

PIN DESCRIPTION

SYMBOL

DESCRIPTION

A0 - A12

Address Inputs

DQ0 – DQ7

Data Inputs/Outputs

CE#, CE2

Chip Enable Inputs

WE#

Write Enable Input

OE#

Output Enable Input

Power Supply

Ground

NC

No Connection