LY6112816ML-15LLE datasheet(6/13 Pages) LYONTEK

Part #	LY6112816ML-15LLE

Description	5V 128K X 16 BIT HIGH SPEED CMOS SRAM

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Manufacturer	LYONTEK [Lyontek Inc.]

Direct Link	http://www.lyontek.com.tw

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LY6112816

Rev. 1.2

5V 128K X 16 BIT HIGH SPEED CMOS SRAM

Lyontek Inc. reserves the rights to change the specifications and products without notice.

5F, No. 2, Industry E. Rd. IX, Science-Based Industrial Park, Hsinchu 300, Taiwan.

TEL: 886-3-6668838

FAX: 886-3-6668836

5

®

AC TEST CONDITIONS

Input Pulse Levels

0.2V to VCC -0.2V

Input Rise and Fall Times

3ns

Input and Output Timing Reference Levels

1.5V

Output Load

CL = 30pF + 1TTL, IOH/IOL = -8mA/16mA

AC ELECTRICAL CHARACTERISTICS

(1) READ CYCLE

PARAMETER

SYM.

LY6112816-15

LY6112816-20

UNIT

MIN.

MAX.

MIN.

MAX.

Read Cycle Time

tRC

15

-

20

ns

Address Access Time

tAA

-

15

-

20

ns

Chip Enable Access Time

tACE

-

15

-

20

ns

Output Enable Access Time

tOE

-7-

8

ns

Chip Enable to Output in Low-Z

tCLZ*

4

-

4

ns

Output Enable to Output in Low-Z tOLZ*

0

-

0

ns

Chip Disable to Output in High-Z

tCHZ*

-

7

-

8

ns

Output Disable to Output in High-Z tOHZ*

-

7

-

8

ns

Output Hold from Address Change tOH

3-3

ns

LB#, UB# Access Time

tBA

-7-

8

ns

LB#, UB# to High-Z Output

tBHZ*

-

7

-

8

ns

LB#, UB# to Low-Z Output

tBLZ*

4

-

4

ns

(2) WRITE CYCLE

PARAMETER

SYM.

LY6112816-15

LY6112816-20

UNIT

MIN.

MAX.

MIN.

MAX.

Write Cycle Time

tWC

15

-

20

-

ns

Address Valid to End of Write

tAW

12

-

16

-

ns

Chip Enable to End of Write

tCW

12

-

16

-

ns

Address Set-up Time

tAS

0-0-

ns

Write Pulse Width

tWP

10

-

11

-

ns

Write Recovery Time

tWR

0-0-

ns

Data to Write Time Overlap

tDW

8-9-

ns

Data Hold from End of Write Time tDH

0-0-

ns

Output Active from End of Write

tOW*

4-5-

ns

Write to Output in High-Z

tWHZ*

-8-9

ns

LB#, UB# Valid to End of Write

tBW

12

-

16

-

ns

*These parameters are guaranteed by device characterization, but not production tested.

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