LY6125616

Rev. 2.4

5V 256K X 16 BIT HIGH SPEED CMOS SRAM

5F, No. 2, Industry E. Rd. IX, Science-Based Industrial Park, Hsinchu 300, Taiwan.

TEL: 886-3-6668838

FAX: 886-3-6668836

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FEATURES

Fast access time : 10/15/20/25ns

Low power consumption:

Operating current : 215/140/110/100mA(MAX.)

Standby current :

15mA(MAX. for 10ns)

3mA(MAX. for 15/20/25ns)

100µA( (MAX. for 15/20/25ns LL version)

Single 5V power supply

All inputs and outputs TTL compatible

Fully static operation

Tri-state output

Data byte control : LB# (DQ0 ~ DQ7)

UB# (DQ8 ~ DQ15)

Data retention voltage : 2.0V (MIN.)

Green package available

Package : 44-pin 400 mil TSOP-II

48-ball 6mm x 8mm TFBGA

GENERAL DESCRIPTION

The LY6125616 is a 4,194,304-bit low power CMOS

static random access memory organized as 262,144

words by 16 bits. It is fabricated using very high

performance, high reliability CMOS technology. Its

standby current is stable within the range of

operating temperature.

The LY6125616 is well designed for low power

application, and particularly well suited for battery

back-up nonvolatile memory application.

The LY6125616 operates from a single power

supply of 5V and all inputs and outputs are fully TTL

compatible

PRODUCT FAMILY

Product

Family

Operating

Temperature

Vcc

Range

Speed

Power Dissipation

Operating(Icc)

LY6125616

0 ~ 70℃

4.5 ~ 5.5V

10ns

15mA(MAX.)

215mA(MAX.)

LY6125616(I)

-40 ~ 85℃

4.5 ~ 5.5V

10ns

15mA(MAX.)

215mA(MAX.)

LY6125616

0 ~ 70℃

4.5 ~ 5.5V

15/20/25ns

3mA(MAX.) 140/110/100mA(MAX.)

LY6125616(E)

-20 ~ 80℃

4.5 ~ 5.5V

15/20/25ns

3mA(MAX.) 140/110/100mA(MAX.)

LY6125616(I)

-40 ~ 85℃

4.5 ~ 5.5V

15/20/25ns

3mA(MAX.) 140/110/100mA(MAX.)

LY6125616(LL)

0 ~ 70℃

4.5 ~ 5.5V

15/20/25ns

100µA(MAX.) 140/110/100mA(MAX.)

LY6125616(LLI)

-40 ~ 85℃

4.5 ~ 5.5V

15/20/25ns

100µA(MAX.) 140/110/100mA(MAX.)