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PDTC123TE Datasheet(PDF) 4 Page - NXP Semiconductors |
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PDTC123TE Datasheet(HTML) 4 Page - NXP Semiconductors |
4 / 10 page PDTC123T_SER_1 © Koninklijke Philips Electronics N.V. 2006. All rights reserved. Product data sheet Rev. 01 — 10 March 2006 4 of 10 Philips Semiconductors PDTC123T series NPN resistor-equipped transistors; R1 = 2.2 k Ω, R2 = open 5. Limiting values [1] Device mounted on an FR4 Printed-Circuit Board (PCB), single-sided copper, tin-plated and standard footprint. [2] Reflow soldering is the only recommended soldering method. [3] Device mounted on an FR4 PCB with 60 µm copper strip line, standard footprint. 6. Thermal characteristics [1] Device mounted on an FR4 PCB, single-sided copper, tin-plated and standard footprint. [2] Reflow soldering is the only recommended soldering method. [3] Device mounted on an FR4 PCB with 60 µm copper strip line, standard footprint. Table 6. Limiting values In accordance with the Absolute Maximum Rating System (IEC 60134). Symbol Parameter Conditions Min Max Unit VCBO collector-base voltage open emitter - 50 V VCEO collector-emitter voltage open base - 50 V VEBO emitter-base voltage open collector - 5 V IO output current - 100 mA ICM peak collector current single pulse; tp ≤ 1ms - 100 mA Ptot total power dissipation Tamb ≤ 25 °C SOT416 [1] - 150 mW SOT346 [1] - 250 mW SOT883 [2][3] - 250 mW SOT54 [1] - 500 mW SOT23 [1] - 250 mW SOT323 [1] - 200 mW Tstg storage temperature −65 +150 °C Tj junction temperature - 150 °C Tamb ambient temperature −65 +150 °C Table 7. Thermal characteristics Symbol Parameter Conditions Min Typ Max Unit Rth(j-a) thermal resistance from junction to ambient in free air SOT416 [1] - - 833 K/W SOT346 [1] - - 500 K/W SOT883 [2][3] - - 500 K/W SOT54 [1] - - 250 K/W SOT23 [1] - - 500 K/W SOT323 [1] - - 625 K/W |
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