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BZB84-C36 Datasheet(PDF) 5 Page - NXP Semiconductors |
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BZB84-C36 Datasheet(HTML) 5 Page - NXP Semiconductors |
5 / 14 page BZB84_SER_3 © NXP B.V. 2009. All rights reserved. Product data sheet Rev. 03 — 9 June 2009 5 of 14 NXP Semiconductors BZB84 series Dual Zener diodes [1] f = 1 MHz; VR =0V [2] tp = 100 µs; square wave; Tj =25 °C prior to surge Table 8. Characteristics per type; BZB84-B2V4 to BZB84-B24 Tj =25 °C unless otherwise specified. BZB84- Bxxx Working voltage VZ (V) Differential resistance rdif (Ω) Reverse current IR (µA) Temperature coefficient SZ (mV/K) Diode capacitance Cd (pF)[1] Non-repetitive peak reverse current IZSM (A)[2] IZ =5mA IZ =1mA IZ =5mA IZ =5mA Min Max Max Max Max VR (V) Min Max Max Max 2V4 2.35 2.45 600 100 50 1 −3.5 0 450 6.0 2V7 2.65 2.75 600 100 20 1 −3.5 0 450 6.0 3V0 2.94 3.06 600 95 10 1 −3.5 0 450 6.0 3V3 3.23 3.37 600 95 5 1 −3.5 0 450 6.0 3V6 3.53 3.67 600 90 5 1 −3.5 0 450 6.0 3V9 3.82 3.98 600 90 3 1 −3.5 0 450 6.0 4V3 4.21 4.39 600 90 3 1 −3.5 0 450 6.0 4V7 4.61 4.79 500 80 3 2 −3.5 0.2 300 6.0 5V1 5.00 5.20 480 60 2 2 −2.7 1.2 300 6.0 5V6 5.49 5.71 400 40 1 2 −2.0 2.5 300 6.0 6V2 6.08 6.32 150 10 3 4 0.4 3.7 200 6.0 6V8 6.66 6.94 80 15 2 4 1.2 4.5 200 6.0 7V5 7.35 7.65 80 15 1 5 2.5 5.3 150 4.0 8V2 8.04 8.36 80 15 0.70 5 3.2 6.2 150 4.0 9V1 8.92 9.28 100 15 0.50 6 3.8 7.0 150 3.0 10 9.80 10.20 150 20 0.20 7 4.5 8.0 90 3.0 11 10.80 11.20 150 20 0.10 8 5.4 9.0 85 2.5 12 11.80 12.20 150 25 0.10 8 6.0 10.0 85 2.5 13 12.70 13.30 170 30 0.10 8 7.0 11.0 80 2.5 15 14.70 15.30 200 30 0.05 10.5 9.2 13.0 75 2.0 16 15.70 16.30 200 40 0.05 11.2 10.4 14.0 75 1.5 18 17.60 18.40 225 45 0.05 12.6 12.4 16.0 70 1.5 20 19.6 20.4 225 55 0.05 14.0 14.4 18.0 60 1.5 22 21.6 22.4 250 55 0.05 15.4 16.4 20.0 60 1.25 24 23.5 24.5 250 70 0.05 16.8 18.4 22.0 55 1.25 |
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Similar Description - BZB84-C36 |
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