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GT40RR21 Datasheet(PDF) 3 Page - Toshiba Semiconductor

Part # GT40RR21
Description  Discrete IGBTs Silicon N-Channel IGBT
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Manufacturer  TOSHIBA [Toshiba Semiconductor]
Direct Link  http://www.semicon.toshiba.co.jp/eng
Logo TOSHIBA - Toshiba Semiconductor

GT40RR21 Datasheet(HTML) 3 Page - Toshiba Semiconductor

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GT40RR21
3
6.
6.
6.
6. Electrical Characteristics
Electrical Characteristics
Electrical Characteristics
Electrical Characteristics
6.1.
6.1.
6.1.
6.1. Static Characteristics (T
Static Characteristics (T
Static Characteristics (T
Static Characteristics (Taaaa = 25
= 25
= 25
= 25
, unless otherwise specified)
, unless otherwise specified)
, unless otherwise specified)
, unless otherwise specified)
Characteristics
Gate leakage current
Collector cut-off current
Gate-emitter cut-off voltage
Collector-emitter saturation voltage
Collector-emitter saturation voltage
Collector-emitter saturation voltage
Collector-emitter saturation voltage
Collector-emitter saturation voltage
Collector-emitter saturation voltage
Diode forward voltage
Symbol
IGES
ICES
VGE(OFF)
VCE(sat)(1)
VCE(sat)(2)
VCE(sat)(3)
VCE(sat)(4)
VCE(sat)(5)
VCE(sat)(6)
VF
Test Condition
VGE = ±25 V, VCE = 0 V
VCE = 1350 V, VGE = 0 V
IC = 40 mA, VCE = 5 V
IC = 20 A, VGE = 15 V
IC = 20 A, VGE = 15 V,
Tj = 125
IC = 20 A, VGE = 15 V,
Tj = 175
IC = 40 A, VGE = 15 V
IC = 40 A, VGE = 15 V,
Tj = 125
IC = 40 A, VGE = 15 V,
Tj = 175
IF = 15 A, VGE = 0 V
Min
4.5
Typ.
1.60
1.85
2.00
2.05
2.45
2.70
1.75
Max
±100
1.0
7.5
2.80
2.80
Unit
nA
mA
V
2012-07-03
Rev.1.0


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