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TPC8A05-H Datasheet(PDF) 3 Page - Toshiba Semiconductor |
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TPC8A05-H Datasheet(HTML) 3 Page - Toshiba Semiconductor |
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3 / 8 page  TPC8A05-H 2009-09-29 3 Electrical Characteristics (Ta = 25°C) Characteristic Symbol Test Condition Min Typ. Max Unit Gate leakage current IGSS VGS = ±20 V, VDS = 0 V ⎯ ⎯ ±100 nA Drain cutoff current IDSS VDS = 30 V, VGS = 0 V ⎯ ⎯ 100 μA V (BR) DSS ID = 10 mA, VGS = 0 V 30 ⎯ ⎯ Drain-source breakdown voltage V (BR) DSX ID = 10 mA, VGS = −20 V 15 ⎯ ⎯ V Gate threshold voltage Vth VDS = 10 V, ID = 1 mA 1.3 ⎯ 2.3 V VGS = 4.5 V, ID = 5 A ⎯ 12.6 17.6 Drain-source ON-resistance RDS (ON) VGS = 10 V, ID = 5 A ⎯ 9.5 13.3 m Ω Forward transfer admittance |Yfs| VDS = 10 V, ID = 5 A 13 26 ⎯ S Input capacitance Ciss ⎯ 1300 1700 Reverse transfer capacitance Crss ⎯ 55 80 Output capacitance Coss VDS = 10 V, VGS = 0 V, f = 1 MHz ⎯ 330 ⎯ pF Gate resistance rg VDS = 10 V, VGS = 0 V, f = 5 MHz ⎯ 1.8 2.7 Ω Rise time tr ⎯ 2.0 ⎯ Turn-on time ton ⎯ 7.1 ⎯ Fall time tf ⎯ 2.5 ⎯ Switching time Turn-off time toff Duty ≤ 1%, tw = 10 μs ⎯ 18 ⎯ ns VDD ≈ 24 V, VGS = 10 V, ID = 10 A ⎯ 15 ⎯ Total gate charge (gate-source plus gate-drain) Qg VDD ≈ 24 V, VGS = 5 V, ID = 10 A ⎯ 7.4 ⎯ Gate-source charge 1 Qgs1 ⎯ 3.6 ⎯ Gate-drain (“Miller”) charge Qgd ⎯ 2.0 ⎯ Gate switch charge QSW VDD ≈ 24 V, VGS = 10 V, ID = 10 A ⎯ 3.7 ⎯ nC Source-Drain Ratings and Characteristics (Ta = 25°C) Characteristic Symbol Test Condition Min Typ. Max Unit Peak forward current Pulse (Note 1) IFP ⎯ ⎯ ⎯ 40 A IDR = 1 A, VGS = 0 V ⎯ −0.4 −0.6 V Forward voltage (diode) VDSF IDR = 10 A, VGS = 0 V ⎯ ⎯ −1.2 V VDD ≈ 15 V 0 V VGS 10 V ID = 5 A VOUT |
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