RFD3055SM9A datasheet(2/8 Pages) FAIRCHILD

Part #	RFD3055SM9A

Description	12A, 60V, 0.150 Ohm, N-Channel Power MOSFETs

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Manufacturer	FAIRCHILD [Fairchild Semiconductor]

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RFD3055, RFD3055SM, RFP3055 Rev. B

Absolute Maximum Ratings TC = 25oC, Unless Otherwise Speciﬁed

RFD3055, RFD3055SM, RFP3055

UNITS

Drain to Source Voltage (Note 1) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . VDSS

60

V

Drain to Gate Voltage (RGS = 20KΩ) (Note 1). . . . . . . . . . . . . . . . . . . . . . . . . . VDGR

60

V

Gate to Source Voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .VGS

±20

V

Continuous Drain Current . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . ID

12

A

Pulsed Drain Current (Note 3) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . IDM

Refer to Peak Current Curve

A

Single Pulse Avalanche Rating (Figures 14, 15) . . . . . . . . . . . . . . . . . . . . . . . . . . IAS

Refer to UIS Curve

Power Dissipation . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .PD

53

W

Linear Derating Factor . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .

0.357

W/oC

Operating and Storage Temperature . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .TJ, TSTG

-55 to 175

oC

Maximum Temperature for Soldering

Leads at 0.063in (1.6mm) from Case for 10s . . . . . . . . . . . . . . . . . . . . . . . . . . . . TL

Package Body for 10s, See Techbrief 334 . . . . . . . . . . . . . . . . . . . . . . . . . . . . Tpkg

300

260

oC

CAUTION: Stresses above those listed in “Absolute Maximum Ratings” may cause permanent damage to the device. This is a stress only rating and operation of the

device at these or any other conditions above those indicated in the operational sections of this speciﬁcation is not implied.

NOTE:

1. TJ = 25

oC to 150oC.

Electrical Speciﬁcations

TC = 25

oC, Unless Otherwise Speciﬁed

PARAMETER

SYMBOL

TEST CONDITIONS

MIN

TYP

MAX

UNITS

Drain to Source Breakdown Voltage

BVDSS

ID = 250µA, VGS = 0V (Figure 11)

60

-

V

Gate Threshold Voltage

VGS(TH)

VGS = VDS, ID = 250µA (Figure 10)

2

-

4

V

Zero Gate Voltage Drain Current

IDSS

VDS = Rated BVDSS, VGS = 0V

-

1

µA

TC = 125

oC, V

DS = 0.8 x Rated BVDSS

--

25

µA

Gate to Source Leakage Current

IGSS

VGS = ±20V

-

100

nA

Drain to Source On Resistance

rDS(ON)

ID = 12A, VGS = 10V (Figure 9) (Note 2)

-

0.150

Ω

Turn-On Time

tON

VDD = 30V, ID = 12A

RL = 2.5Ω, VGS = +10V

RG = 10Ω

(Figure 13)

-

40

ns

Turn-On Delay Time

td(ON)

-7-

ns

Rise Time

tr

-21-

ns

Turn-Off Delay Time

td(OFF)

-16-

ns

Fall Time

tf

-10-

ns

Turn-Off Time

tOFF

-

40

ns

Total Gate Charge

Qg(TOT)

VGS = 0 to 20V

VDD = 48V,ID = 12A,

RL = 4Ω,

Ig(REF) = 0.24mA

(Figure 13)

-19

23

nC

Gate Charge at 10V

Qg(10)

VGS = 0 to 10V

-

10

12

nC

Threshold Gate Charge

Qg(TH)

VGS = 0 to 2V

-

0.6

0.8

nC

Input Capacitance

CISS

VDS = 25V, VGS = 0V,

f = 1MHz (Figure 12)

-

300

-

pF

Output Capacitance

COSS

-

100

-

pF

Reverse Transfer Capacitance

CRSS

-30-

pF

Thermal Resistance Junction to Case

RθJC

-

2.8

oC/W

Thermal Resistance Junction to Ambient

RθJA

TO-251 and TO-252

-

100

oC/W

TO-220

-

62.5

oC/W

Source to Drain Diode Speciﬁcations

PARAMETER

SYMBOL

TEST CONDITIONS

MIN

TYP

MAX

UNITS

Source to Drain Diode Voltage

VSD

ISD = 12A

-

1.5

V

Reverse Recovery Time

trr

ISD = 12A, dISD/dt = 100A/µs

-

100

ns

NOTES:

2. Pulse Test: Pulse Width

≤ 300ms, Duty Cycle ≤ 2%.

3. Repetitive Rating: Pulse Width limited by max junction temperature. See Transient Thermal Impedance Curve (Figure 3) and Peak Current

Capability Curve (Figure 5).

RFD3055, RFD3055SM, RFP3055

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