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TISP1082F3 Datasheet(PDF) 11 Page - Bourns Electronic Solutions |
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TISP1082F3 Datasheet(HTML) 11 Page - Bourns Electronic Solutions |
11 / 12 page SEPTEMBER 1993 - REVISED SEPTEMBER 2008 Specifications are subject to change without notice. Customers should verify actual device performance in their specific applications. TISP1xxxF3 Overvoltage Protector Series APPLICATIONS INFORMATION Protection Voltage The protection voltage, (V(BO)), increases under lightning surge conditions due to thyristor regeneration. This increase is dependent on the rate of current rise, di/dt, when the TISP¤ device is clamping the voltage in its breakdown region. The V(BO) value under surge condi- tions can be estimated by multiplying the 50 Hz rate V(BO) (250 V/ms) value by the normalized increase at the surge’s di/dt (Figure 8.). An estimate of the di/dt can be made from the surge generator voltage rate of rise, dv/dt, and the circuit resistance. As an example, the ITU-T K.21 1.5 kV, 10/700 µs surge has an average dv/dt of 150 V/µs, but, as the rise is exponential, the initial dv/dt is higher, being in the region of 450 V/µs. The instantaneous generator output resistance is 25 Ω. If the equipment has an additional series resistance of 20 Ω, the total series resistance becomes 45 Ω. The maximum di/dt then can be estimated as 450/45 = 10 A/µs. In practice, the measured di/dt and protection voltage increase will be lower due to inductive effects and the finite slope resistance of the TISP¤ device breakdown region. Capacitance Off-state Capacitance The off-state capacitance of a TISP¤ device is sensitive to junction temperature, TJ, and the bias voltage, comprising of the d.c. volt- age, VD, and the a.c. voltage, Vd. All the capacitance values in this data sheet are measured with an a.c. voltage of 100 mV. The typical 25 °C variation of capacitance value with a.c. bias is shown in Figure 21. When VD>> Vd, the capacitance value is independent on the value of Vd. The capacitance is essentially constant over the range of normal telecommunication frequencies. Figure 20. V d - RMS AC T est V oltage - mV 1 10 100 1000 0.70 0.75 0.80 0.85 0.90 0.95 1.00 1.05 AIXXAA Normalized to V d = 100 mV DC Bias, V D = 0 NORMALIZED CAPACITANCE vs RMS AC TEST VOLTAGE |
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