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PTVS9V0P1UTP Datasheet(PDF) 6 Page - NXP Semiconductors |
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PTVS9V0P1UTP Datasheet(HTML) 6 Page - NXP Semiconductors |
6 / 12 page PTVSXP1UTP_SER All information provided in this document is subject to legal disclaimers. © NXP B.V. 2011. All rights reserved. Product data sheet Rev. 1 — 11 October 2011 6 of 12 NXP Semiconductors PTVSxP1UTP series High-temperature 600 W Transient Voltage Suppressor Fig 1. 10/1000 s pulse waveform according to IEC 61643-321 Fig 2. Relative variation of rated peak pulse power as a function of junction temperature; typical values Tamb =25 CTamb =25 C; f = 1 MHz (1) PTVS5V0P1UTP (2) PTVS12VP1UTP (3) PTVS24VP1UTP (4) PTVS64VP1UTP Fig 3. Rated peak pulse power as a function of pulse duration; typical values Fig 4. Diode capacitance as a function of reverse voltage; typical values tp (ms) 0 4.0 3.0 1.0 2.0 006aab319 50 100 150 IPP (%) 0 50 % IPP; 1000 μs 100 % IPP; 10 μs Tj (°C) 0 200 150 50 100 006aac765 0.4 0.8 1.2 0.0 PPPM PPPM(25°C) 006aac172 104 103 105 PPPM (W) 102 tp (μs) 10−1 104 103 1102 10 006aac173 103 102 104 Cd (pF) 10 VR (V) 1102 10 (1) (2) (3) (4) |
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