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APT100S20BG Datasheet(PDF) 2 Page - Microsemi Corporation |
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APT100S20BG Datasheet(HTML) 2 Page - Microsemi Corporation |
2 / 4 page DYNAMIC CHARACTERISTICS APT100S20B(G) THERMAL AND MECHANICAL CHARACTERISTICS Microsemi reserves the right to change, without notice, the specifications and information contained herein. 1 Countinous current limited by package lead temperature. MIN TYP MAX - 70 - 230 -6- - 110 - 690 -11 - -95 - 1750 -32 UNIT ns nC Amps ns nC Amps ns nC Amps Characteristic Reverse Recovery Time Reverse Recovery Charge Maximum Reverse Recovery Current Reverse Recovery Time Reverse Recovery Charge Maximum Reverse Recovery Current Reverse Recovery Time Reverse Recovery Charge Maximum Reverse Recovery Current Symbol t rr Q rr I RRM t rr Q rr I RRM t rr Q rr I RRM Test Conditions I F = 100A, diF/dt = -200A/µs V R = 133V, TC = 25°C I F = 100A, diF/dt = -200A/µs V R = 133V, TC = 125°C I F = 100A, diF/dt = -700A/µs V R = 133V, TC = 125°C 10-5 10-4 10-3 10-2 10-1 1.0 RECTANGULAR PULSE DURATION (seconds) FIGURE 1a. MAXIMUM EFFECTIVE TRANSIENT THERMAL IMPEDANCE, JUNCTION-TO-CASE vs. PULSE DURATION 0.20 0.18 0.16 0.14 0.12 0.10 0.08 0.06 0.04 0.02 0 Note: Duty Factor D = t1/t2 Peak TJ = PDM x ZθJC + TC t1 t2 0.5 SINGLE PULSE 0.1 0.3 0.7 0.05 FIGURE 1b, TRANSIENT THERMAL IMPEDANCE MODEL Characteristic / Test Conditions Junction-to-Case Thermal Resistance Package Weight Maximum Mounting Torque Symbol R θJC W T Torque MIN TYP MAX .18 0.22 5.9 10 1.1 UNIT °C/W oz g lb•in N•m 0.00817 0.0174 0.0593 0.00514 0.00242 0.0158 Dissipated Power (Watts) T J (C) T C (C) Z EXT are the external thermal impedances: Case to sink, sink to ambient, etc. Set to zero when modeling only the case to junction. 0.095 0.384 D = 0.9 |
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